 | |  | |
| PartNumber | BSB028N06NN3 G | BSB044N08NN3 G | BSB028N06NN3GXUMA1 |
| Description | MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3 | MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3 | MOSFET N-CH 60V 22A WDSON-2 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | WDSON-2-3 | WDSON-2-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 80 V | - |
| Id Continuous Drain Current | 90 A | 90 A | - |
| Rds On Drain Source Resistance | 2.8 mOhms | 3.7 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 108 nC | 73 nC | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 78 W | 78 W | - |
| Configuration | Single | Single | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 0.7 mm | 0.7 mm | - |
| Length | 6.35 mm | 6.35 mm | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.05 mm | 5.05 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 6 ns | 7 ns | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9 ns | 9 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 38 ns | 26 ns | - |
| Typical Turn On Delay Time | 21 ns | 14 ns | - |
| Part # Aliases | BSB028N06NN3GXUMA1 BSB28N6NN3GXT SP000605956 | BSB044N08NN3GXUMA1 BSB44N8NN3GXT SP000604542 | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Channel Mode | - | Enhancement | - |
| Forward Transconductance Min | - | 36 S | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSB165N15NZ3 G | MOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3 | |
| BSB056N10NN3 G | MOSFET N-Ch 100V 83A CanPAK3 MN OptiMOS 3 | ||
| BSB028N06NN3 G | MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3 | ||
| BSB165N15NZ3GXUMA1 | MOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3 | ||
| BSB280N15NZ3 G | MOSFET N-Ch 150V 30A CanPAK3 MZ OptiMOS 3 | ||
| BSB044N08NN3 G | MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3 | ||
| BSB104N08NP3GXUSA1 | MOSFET MV POWER MOS | ||
| BSB044N08NN3GXUMA1 | MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3 | ||
| BSB028N06NN3 G | MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3 | ||
| BSB028N06NN3GXUMA1 | MOSFET N-CH 60V 22A WDSON-2 | ||
| BSB056N10NN3 G | Trans MOSFET N-CH 100V 9A 7-Pin WDSON | ||
| BSB056N10NN3GXUMA1 | MOSFET N-CH 100V 9A WDSON-2 | ||
| BSB104N08NP3GXUSA1 | MOSFET N-CH 80V 13A 2WDSON | ||
| BSB165N15NZ3 G | MOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3 | ||
| BSB165N15NZ3GXUMA1 | MOSFET N-CH 150V 9A WDSON-2 | ||
| BSB280N15NZ3GXUMA1 | MOSFET N-CH 150V 9A WDSON-2 | ||
| BSB044N08NN3GXUMA1 | MOSFET N-CH 80V 18A WDSON-2 | ||
| BSB053N03LP G | MOSFET N-CH 30V 71A 2WDSON | ||
| BSB044N08NN3 G | MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3 | ||
| BSB280N15NZ3 G | RF Bipolar Transistors MOSFET N-Ch 150V 30A CanPAK3 MZ OptiMOS 3 | ||
Infineon Technologies |
BSB056N10NN3GXUMA1 | MOSFET MV POWER MOS | |
| BSB280N15NZ3GXUMA1 | MOSFET MV POWER MOS | ||
TXC |
BSB1270002 | Standard Clock Oscillators 212.5MHz 3.3V 0C +70C | |
| BSB1270002 | XTAL OSC XO 212.5000MHZ LVPECL | ||
| BSB280N15NZ3GXT | Trans MOSFET N-CH 150V 9A 7-Pin WDSON - Tape and Reel (Alt: BSB280N15NZ3GXUMA1) | ||
| BSB028N06NN3G | Trans MOSFET N-CH 60V 22A 7-Pin WDSON T/R - Tape and Reel (Alt: BSB028N06NN3GXUMA1) | ||
| BSB044N08NN3 G3 | Neu und Original | ||
| BSB044N08NN3GTR | Neu und Original | ||
| BSB04505HA | Neu und Original | ||
| BSB05505HP | Neu und Original | ||
| BSB104N08NP3 G | Neu und Original | ||
| BSB12SA | Neu und Original | ||
| BSB14D | Circuit Breaker Accessories SEL. HANDLE-BLACK | ||
| BSB150N15NZ3 G | Trans MOSFET N-CH 150V 48A 7-Pin WDSON T/R (Alt: BSB150N15NZ3 G) | ||
| BSB150N15NZ3G | Neu und Original | ||
| BSB16GCDRS4EM | Neu und Original | ||
| BSB17N03LX3G | Neu und Original | ||
| BSB3220D-4R7M-C3 | Neu und Original | ||
| BSB3505D | Neu und Original | ||
| BSB352 | Neu und Original | ||
| BSB600000B | Neu und Original | ||
| BSB6SN | Neu und Original | ||
| BSB028N06NN3 | Neu und Original | ||
| BSB044N08NN | Neu und Original | ||
| BSB044N08NN3G | Neu und Original | ||
| BSB104N08NP3G | 80V,10.4m��,50A,N-Ch Power MOSFET | ||
| BSB053N03LPG | Power Field-Effect Transistor, 17A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSB056N10NN3G | Trans MOSFET N-CH 100V 9A 7-Pin WDSON-2 T/R (Alt: SP000604540) | ||
| BSB165N15NZ3G | Trans MOSFET N-CH 150V 9A 7-Pin WDSON-2 T/R (Alt: BSB165N15NZ3 G) | ||
| BSB280N15NZ3G | Power Field-Effect Transistor, 9A I(D), 150V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |