PartNumber | BSC0924NDI | BSC0924NDIATMA1 | BSC0924NDI , TDZ TR 5.1 |
Description | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | MOSFET LV POWER MOS | |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TISON-8 | TDSON-8 | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 40 A | - | - |
Rds On Drain Source Resistance | 3.8 mOhms, 2.8 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 10 nC, 12.8 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 2.5 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 1.27 mm | 1.27 mm | - |
Length | 5.9 mm | 5.9 mm | - |
Transistor Type | 2 N-Channel | - | - |
Width | 5.15 mm | 5.15 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 32 S, 36 S | - | - |
Development Kit | - | - | - |
Fall Time | 3 ns, 2.2 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3.8 ns, 2.8 ns | - | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 17 ns, 15 ns | - | - |
Typical Turn On Delay Time | 4.7 ns, 3.3 ns | - | - |
Part # Aliases | BSC0924NDIATMA1 BSC924NDIXT SP000934750 | BSC0924NDI BSC924NDIXT SP000934750 | - |