BSC0924

BSC0924NDI vs BSC0924NDIATMA1 vs BSC0924NDI , TDZ TR 5.1

 
PartNumberBSC0924NDIBSC0924NDIATMA1BSC0924NDI , TDZ TR 5.1
DescriptionMOSFET N-Ch 30V,30V 40A,40A TISON-8MOSFET LV POWER MOS
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTISON-8TDSON-8-
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance3.8 mOhms, 2.8 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge10 nC, 12.8 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
Transistor Type2 N-Channel--
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min32 S, 36 S--
Development Kit---
Fall Time3 ns, 2.2 ns--
Product TypeMOSFETMOSFET-
Rise Time3.8 ns, 2.8 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time17 ns, 15 ns--
Typical Turn On Delay Time4.7 ns, 3.3 ns--
Part # AliasesBSC0924NDIATMA1 BSC924NDIXT SP000934750BSC0924NDI BSC924NDIXT SP000934750-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
BSC0924NDI MOSFET N-Ch 30V,30V 40A,40A TISON-8
BSC0924NDIATMA1 MOSFET 2N-CH 30V 17A/32A TISON8
Infineon Technologies
Infineon Technologies
BSC0924NDIATMA1 MOSFET LV POWER MOS
BSC0924NDI MOSFET N-Ch 30V,30V 40A,40A TISON-8
BSC0924NDI , TDZ TR 5.1 Neu und Original
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