BSC123N1

BSC123N10LS G vs BSC123N10LS vs BSC123N10LS G

 
PartNumberBSC123N10LS GBSC123N10LSBSC123N10LS G
DescriptionMOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
ManufacturerInfineonINFINEON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current71 A--
Rds On Drain Source Resistance10 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge68 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation114 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 2--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min49 S--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time25 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time41 ns--
Typical Turn On Delay Time18 ns--
Part # AliasesBSC123N10LSGATMA1 BSC123N1LSGXT SP000379612--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
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