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BSC123N10LS G

BSC123N10LS G
Mfr. #:
BSC123N10LS G
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC123N10LS G Datenblatt
Die Zustellung:
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Zahlung:
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ECAD Model:
Mehr Informationen:
BSC123N10LS G Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
INFINEON
Produktkategorie
FETs - Einzeln
Serie
OptiMOS 2
Verpackung
Spule
Teil-Aliasnamen
BSC123N10LSGATMA1 BSC123N10LSGXT SP000379612
Montageart
SMD/SMT
Handelsname
OptiMOS
Paket-Koffer
TDSON-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
114 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
7 ns
Anstiegszeit
25 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
10.6 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Widerstand
12.3 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
41 ns
Typische-Einschaltverzögerungszeit
18 ns
Kanal-Modus
Erweiterung
Tags
BSC123N10LSG, BSC123N1, BSC123, BSC12, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Teil # Mfg. Beschreibung Aktie Preis
BSC123N10LSGATMA1
DISTI # BSC123N10LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 71A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		11954In Stock
  • 1000:$0.9241
  • 500:$1.1153
  • 100:$1.4340
  • 10:$1.7840
  • 1:$1.9800
BSC123N10LSGATMA1
DISTI # BSC123N10LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 71A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		11954In Stock
  • 1000:$0.9241
  • 500:$1.1153
  • 100:$1.4340
  • 10:$1.7840
  • 1:$1.9800
BSC123N10LSGATMA1
DISTI # BSC123N10LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 71A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$0.8044
BSC123N10LSGATMA1
DISTI # BSC123N10LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 10.6A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC123N10LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.6479
  • 10000:$0.6249
  • 20000:$0.6019
  • 30000:$0.5819
  • 50000:$0.5709
BSC123N10LSGATMA1
DISTI # SP000379612		Infineon Technologies AGTrans MOSFET N-CH 100V 10.6A 8-Pin TDSON T/R (Alt: SP000379612)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.8859
  • 10000:€0.7249
  • 20000:€0.6649
  • 30000:€0.6139
  • 50000:€0.5699
BSC123N10LSGATMA1
DISTI # 52R3478		Infineon Technologies AGMOSFET, N CHANNEL, 100V, 7A, PG-TSDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:71A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.85V RoHS Compliant: Yes0
  • 1000:$0.8980
  • 500:$1.0800
  • 100:$1.2400
  • 10:$1.5500
  • 1:$1.8300
BSC123N10LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 10.6A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		550
  • 1000:$0.7100
  • 500:$0.7500
  • 100:$0.7800
  • 25:$0.8100
  • 1:$0.8700
BSC123N10LS G
DISTI # 726-BSC123N10LSG		Infineon Technologies AGMOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
RoHS: Compliant		2794
  • 1:$1.6600
  • 10:$1.4100
  • 100:$1.1300
  • 500:$0.9850
  • 1000:$0.8160
BSC123N10LSGATMA1
DISTI # 726-BSC123N10LSGATMA		Infineon Technologies AGMOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
RoHS: Compliant		0
  • 1:$1.6600
  • 10:$1.4100
  • 100:$1.1300
  • 500:$0.9850
  • 1000:$0.8160
BSC123N10LSGATMA1
DISTI # 7545305P		Infineon Technologies AGMOSFET N-CH 100V 10.6A OPTIMOS2 TDSON8, RL2462
  • 20:£1.2150
  • 40:£1.1600
  • 100:£1.1150
  • 300:£1.0750
BSC123N10LSGInfineon Technologies AG10.6 A, 100 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET71
  • 51:$1.1250
  • 14:$1.5000
  • 1:$2.2500
BSC123N10LSGInfineon Technologies AG 100
    BSC123N10LSGATMA1
    DISTI # 1775470    		Infineon Technologies AGMOSFET, N CH, 71A, 100V, PG-TDSON-8
    RoHS: Compliant    		3564
    • 500:£0.7660
    • 250:£0.8230
    • 100:£0.8790
    • 25:£1.0900
    • 5:£1.1900
    BSC123N10LSGInfineon Technologies AG100V,12.3m,71A,N-Channel Power MOSFET100
    • 1:$1.3100
    • 100:$1.0900
    • 500:$0.9700
    • 1000:$0.9400
    BSC123N10LS G
    DISTI # C1S322000087178    		Infineon Technologies AGTrans MOSFET N-CH 100V 10.6A 8-Pin TDSON EP
    RoHS: Compliant    		197
    • 100:$0.7370
    BSC123N10LSGATMA1
    DISTI # 1775470    		Infineon Technologies AGMOSFET, N CH, 71A, 100V, PG-TDSON-8
    RoHS: Compliant    		3265
    • 1000:$1.3000
    • 5000:$1.3000
    • 500:$1.5600
    • 100:$1.7900
    • 10:$2.2300
    • 1:$2.6300
    Bild Teil # Beschreibung
    BSC123N08NS3 G

    Mfr.#: BSC123N08NS3 G

    OMO.#: OMO-BSC123N08NS3-G

    		 MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
    BSC123N10LS G

    Mfr.#: BSC123N10LS G

    OMO.#: OMO-BSC123N10LS-G

    		 MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
    BSC123N10LSGATMA1

    Mfr.#: BSC123N10LSGATMA1

    OMO.#: OMO-BSC123N10LSGATMA1

    		 MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
    BSC123N08N

    Mfr.#: BSC123N08N

    OMO.#: OMO-BSC123N08N-1190

    		 Neu und Original
    BSC123N08NS3 G

    Mfr.#: BSC123N08NS3 G

    OMO.#: OMO-BSC123N08NS3-G-1190

    		 Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP
    BSC123N08NS3GATMA1

    Mfr.#: BSC123N08NS3GATMA1

    OMO.#: OMO-BSC123N08NS3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 80V 55A TDSON-8
    BSC123N08NS3GATMA1 , TDZ

    Mfr.#: BSC123N08NS3GATMA1 , TDZ

    OMO.#: OMO-BSC123N08NS3GATMA1-TDZ-1190

    		 Neu und Original
    BSC123N10LS

    Mfr.#: BSC123N10LS

    OMO.#: OMO-BSC123N10LS-1190

    		 Neu und Original
    BSC123N10LS G

    Mfr.#: BSC123N10LS G

    OMO.#: OMO-BSC123N10LS-G-1190

    		 Neu und Original
    BSC123N10LS G

    Mfr.#: BSC123N10LS G

    OMO.#: OMO-BSC123N10LS-G-317

    		 RF Bipolar Transistors MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von BSC123N10LS G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,10 $
    1,10 $
    10
    1,04 $
    10,43 $
    100
    0,99 $
    98,82 $
    500
    0,93 $
    466,65 $
    1000
    0,88 $
    878,40 $
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