 | |  | |
| PartNumber | BSF134N10NJ3 G | BSF083N03LQ G | BSF077N06NT3GXUMA1 |
| Description | MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3 | MOSFET N-Ch 30V 13A CanPAK-2 SQ | MOSFET N-CH 60V 13A WDSON-2 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | GaN | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | WDSON-2-3 | WDSON-2-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 30 V | - |
| Id Continuous Drain Current | 40 A | 13 A | - |
| Rds On Drain Source Resistance | 13.4 mOhms | 8.3 mOhms | - |
| Configuration | Single | Single | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 0.7 mm | 0.7 mm | - |
| Length | 6.35 mm | 6.35 mm | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.05 mm | 5.05 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | BSF134N10NJ3GXUMA1 BSF134N1NJ3GXT SP000604536 | BSF083N03LQGXT | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 40 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 2.2 W | - |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 2.8 ns | - |
| Rise Time | - | 3.2 ns | - |
| Typical Turn Off Delay Time | - | 14 ns | - |
| Typical Turn On Delay Time | - | 3.3 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSF134N10NJ3 G | MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3 | |
| BSF077N06NT3GXUMA1 | MOSFET N-CH 60V 13A WDSON-2 | ||
| BSF134N10NJ3GXUMA1 | MOSFET N-CH 100V 9A WDSON-2 | ||
| BSF083N03LQ G | MOSFET N-CH 30V 53A MG-WDSON-2 | ||
| BSF134N10NJ3 G | IGBT Transistors MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3 | ||
Infineon Technologies |
BSF083N03LQ G | MOSFET N-Ch 30V 13A CanPAK-2 SQ | |
| BSF134N10NJ3GXUMA1 | MOSFET MV POWER MOS | ||
| BSF141-0909 | SMA BLKD JACK .141 S/R | ||
| BSF077N06NT3 | Neu und Original | ||
| BSF077N06NT3 G | MOSFET N-KANAL POWER MOS | ||
| BSF1004CTPIEL1R0MT | Neu und Original | ||
| BSF1005RHGS100MT | Neu und Original | ||
| BSF1005RHGS100MT,BRL1608 | Neu und Original | ||
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| BSF1005RHGS561MT | Neu und Original | ||
| BSF110N06NT3G | Neu und Original | ||
| BSF1122 | Neu und Original | ||
| BSF1204RHSU-270MT | Neu und Original | ||
| BSF1205RHSU101MT | Neu und Original | ||
| BSF1207RHSU7R6NT | Neu und Original | ||
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| BSF1306DSCC330MT | Neu und Original | ||
| BSF134N10NJ3GXUMA1536 | Neu und Original | ||
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| BSF17 A29T | Neu und Original | ||
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| BSF1956J | Neu und Original | ||
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| BSF2966K | Neu und Original | ||
| BSF2D18RHSU-100NT | Neu und Original | ||
| BSF2D18RHSU-220NT | Neu und Original | ||
| BSF2D18RHSU-3R3NT | Neu und Original | ||
| BSF2D18RHSU6R8NT | Neu und Original | ||
| BSF3010LQHMU100MT | Neu und Original | ||
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| BSF2-300ICV6M | I-SenseModule 300A CL I | ||
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| BSF083N03LQG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSF1004DTPIEL6R8MT | Neu und Original | ||
| BSF1004RHGS330MT | Neu und Original | ||
| BSF1004RHGS680MT | Neu und Original | ||
| BSF1005RHGS220MT,BRL1608 | Neu und Original | ||
| BSF134N10NJ3G | Power Field-Effect Transistor, 9A I(D), 100V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSF110N06NT3GXUMA1 | RF Bipolar Transistors MOSFET N-Ch 60V 47A CanPAK-3 ST |