PartNumber | BSG0811ND | BSG0810NDIATMA1 | BSG0811NDATMA1 |
Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET LV POWER MOS | MOSFET LV POWER MOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TISON-8 | TISON-8 | TISON-8 |
Number of Channels | 2 Channel | - | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 25 V | 25 V | 25 V |
Id Continuous Drain Current | 50 A | - | 50 A |
Rds On Drain Source Resistance | 2.4 mOhms, 700 uOhms | - | 2.4 mOhms, 700 uOhms |
Vgs th Gate Source Threshold Voltage | 1.2 V | - | 1.2 V |
Vgs Gate Source Voltage | 16 V | - | 16 V |
Qg Gate Charge | 8.4 nC, 29 nC | - | 8.4 nC, 29 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 6.25 W | - | 6.25 W |
Configuration | Dual | - | Dual |
Channel Mode | Enhancement | - | Enhancement |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 1.15 mm | 1.15 mm | 1.15 mm |
Length | 6 mm | 6 mm | 6 mm |
Series | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
Transistor Type | 2 N-Channel | - | 2 N-Channel |
Width | 5 mm | 5 mm | 5 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 46 S, 90 S | - | 46 S, 90 S |
Fall Time | 1.4 ns, 2.6 ns | - | 1.4 ns, 2.6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 4.7 ns, 4.3 ns | - | 4.7 ns, 4.3 ns |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 4.3 ns, 8.8 ns | - | 4.3 ns, 8.8 ns |
Typical Turn On Delay Time | 4.3 ns, 5.6 ns | - | 4.3 ns, 5.6 ns |
Part # Aliases | BSG0811NDATMA1 SP001075902 | BSG0810NDI SP001241674 | BSG0811ND SP001075902 |
Unit Weight | 0.008113 oz | - | - |