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BSG0811NDATMA1

BSG0811NDATMA1
Mfr. #:
BSG0811NDATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 2N-CH 25V 19A/41A 8TISON
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSG0811NDATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
FETs - Arrays
Serie
OptiMOS
Verpackung
Band & Spule (TR)
Teil-Aliasnamen
BSG0811ND SP001075902
Paket-Koffer
8-PowerTDFN
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Lieferanten-Geräte-Paket
PG-TISON-8
FET-Typ
2 N-Channel (Dual) Asymmetrical
Leistung max
2.5W
Drain-zu-Source-Spannung-Vdss
25V
Eingangskapazität-Ciss-Vds
1100pF @ 12V
FET-Funktion
Logic Level Gate, 4.5V Drive
Strom-Dauer-Drain-Id-25°C
19A, 41A
Rds-On-Max-Id-Vgs
3 mOhm @ 20A, 10V
Vgs-th-Max-Id
2V @ 250μA
Gate-Lade-Qg-Vgs
8.4nC @ 4.5V
Tags
BSG0811, BSG08, BSG0, BSG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 25 V 3/0.8 mOhm 5.6/20 nC OptiMOS™ Power Mosfet - TISON8-4
***et
Trans MOSFET N-CH 25V 19A/41A 10-Pin TISON8-4 T/R
***ical
Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R
***ponent Sense
FET BSG0811ND 25V 50A DUAL-NFET PG-TISON
*** Source Electronics
MOSFET 2N-CH 25V 19A/41A 8TISON
***ronik
Dual N-CH 25V 50A 3/0,8mOhm
***ark
Mosfet, Dual N-Ch, 25V, 50A, Tison; Transistor Polarity:dual N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:25V; On Resistance Rds(On):0.0024Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, DUAL N-CH, 25V, 50A, TISON; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:6.25W; Transistor Case Style:TISON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, DUAL N-CH, 25V, 50A, TISON; Biegunowość tranzystora:Podwójny kanał N; Prąd ciągły Id drenu:50A; Napięcie drenu / źródła Vds:25V; Rezystancja przewodzenia Rds(on):0.0024ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:1.6V; Straty mocy Pd:6.25W; Rodzaj obudowy tranzystora:TISON; Liczba pinów:8piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:OptiMOS 5 Series; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 Power Block is a leadless SMD package in a 5.0x6.0mm package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized. | Summary of Features: 50A max average load current; Source-down low side MOSFET for better PCB cooling; Internally connected low-side and high side (lowest loop inductance); High side Kelvin connection for more efficient driving | Benefits: Compact and simplified layout for a DC-DC converter; Optimized layout with lowest loop inductivity and best thermal performance | Target Applications: Desktop and server; Single-phase & multiphase POL; CPU/GPU regulation in notebooks & DDR memory; High power density voltage regulator
Teil # Mfg. Beschreibung Aktie Preis
BSG0811NDATMA1
DISTI # V72:2272_06383271		Infineon Technologies AGTrans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R
RoHS: Compliant		850
  • 500:$1.1473
  • 250:$1.2594
  • 100:$1.3057
  • 25:$1.5345
  • 10:$1.5935
  • 1:$1.8288
BSG0811NDATMA1
DISTI # BSG0811NDATMA1CT-ND		Infineon Technologies AGMOSFET 2N-CH 25V 19A/41A 8TISON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3820In Stock
  • 1000:$1.1944
  • 500:$1.4415
  • 100:$1.8533
  • 10:$2.3060
  • 1:$2.5500
BSG0811NDATMA1
DISTI # BSG0811NDATMA1DKR-ND		Infineon Technologies AGMOSFET 2N-CH 25V 19A/41A 8TISON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3820In Stock
  • 1000:$1.1944
  • 500:$1.4415
  • 100:$1.8533
  • 10:$2.3060
  • 1:$2.5500
BSG0811NDATMA1
DISTI # BSG0811NDATMA1TR-ND		Infineon Technologies AGMOSFET 2N-CH 25V 19A/41A 8TISON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$1.0396
BSG0811NDATMA1
DISTI # 30670549		Infineon Technologies AGTrans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R
RoHS: Compliant		850
  • 500:$1.1456
  • 250:$1.2574
  • 100:$1.3035
  • 25:$1.5316
  • 10:$1.5905
  • 7:$1.8250
BSG0811NDATMA1
DISTI # BSG0811NDATMA1		Infineon Technologies AGTrans MOSFET N-CH 25V 19A/41A 10-Pin TISON8-4 T/R - Tape and Reel (Alt: BSG0811NDATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 5000
  • 5000:$1.0469
  • 10000:$1.0089
  • 20000:$0.9729
  • 30000:$0.9399
  • 50000:$0.9229
BSG0811NDATMA1
DISTI # BSG0811ND		Infineon Technologies AGTrans MOSFET N-CH 25V 19A/41A 10-Pin TISON8-4 T/R (Alt: BSG0811ND)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSG0811NDATMA1
    DISTI # 13AC8343    		Infineon Technologies AGMOSFET, DUAL N-CH, 25V, 50A, TISON,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes4980
    • 1:$2.1400
    • 10:$1.8200
    • 25:$1.7000
    • 50:$1.5800
    • 100:$1.4600
    • 250:$1.3700
    • 500:$1.2800
    • 1000:$1.0600
    BSG0811NDATMA1Infineon Technologies AGDual N-Channel 25 V 3/0.8 mOhm 5.6/20 nC OptiMOS Power Mosfet - TISON8-4
    RoHS: Not Compliant    		5000Reel
    • 5000:$1.1200
    BSG0811ND
    DISTI # 726-BSG0811ND    		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
    RoHS: Compliant    		0
    • 1:$2.1400
    • 10:$1.8200
    • 100:$1.4600
    • 500:$1.2800
    • 1000:$1.0600
    • 2500:$0.9820
    • 5000:$0.9460
    BSG0811NDATMA1
    DISTI # 726-BSG0811NDATMA1    		Infineon Technologies AGMOSFET LV POWER MOS
    RoHS: Compliant    		0
    • 1:$2.1400
    • 10:$1.8200
    • 100:$1.4600
    • 500:$1.2800
    • 1000:$1.0600
    • 2500:$0.9820
    BSG0811NDATMA1
    DISTI # C1S322000639157    		Infineon Technologies AGMOSFETs850
    • 250:$1.2574
    • 100:$1.3035
    • 25:$1.5316
    • 10:$1.5905
    BSG0811NDATMA1
    DISTI # 2726090    		Infineon Technologies AGMOSFET, DUAL N-CH, 25V, 50A, TISON
    RoHS: Compliant    		4980
    • 5:£1.4900
    • 25:£1.3800
    • 100:£1.1000
    • 250:£1.0400
    • 500:£0.9700
    BSG0811NDATMA1
    DISTI # 2726090    		Infineon Technologies AGMOSFET, DUAL N-CH, 25V, 50A, TISON
    RoHS: Compliant    		4980
    • 1:$4.0700
    • 10:$3.6800
    • 100:$2.9600
    • 500:$2.3000
    • 1000:$1.9100
    Bild Teil # Beschreibung
    BSG0811ND

    Mfr.#: BSG0811ND

    OMO.#: OMO-BSG0811ND

    		 MOSFET DIFFERENTIATED MOSFETS
    BSG0811NDATMA1

    Mfr.#: BSG0811NDATMA1

    OMO.#: OMO-BSG0811NDATMA1

    		 MOSFET LV POWER MOS
    BSG0811ND

    Mfr.#: BSG0811ND

    OMO.#: OMO-BSG0811ND-1190

    		 MOSFET DIFFERENTIATED MOSFETS
    BSG0811ND(SP001075902)

    Mfr.#: BSG0811ND(SP001075902)

    OMO.#: OMO-BSG0811ND-SP001075902--1190

    		 Neu und Original
    BSG0811NDATMA1

    Mfr.#: BSG0811NDATMA1

    OMO.#: OMO-BSG0811NDATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET 2N-CH 25V 19A/41A 8TISON
    BSG0811NDI

    Mfr.#: BSG0811NDI

    OMO.#: OMO-BSG0811NDI-1190

    		 Neu und Original
    BSG0811NDATMA1-CUT TAPE

    Mfr.#: BSG0811NDATMA1-CUT TAPE

    OMO.#: OMO-BSG0811NDATMA1-CUT-TAPE-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von BSG0811NDATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,32 $
    1,32 $
    10
    1,25 $
    12,50 $
    100
    1,18 $
    118,42 $
    500
    1,12 $
    559,20 $
    1000
    1,05 $
    1 052,60 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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