BSH11

BSH111BKR vs BSH111,215 vs BSH111,235

 
PartNumberBSH111BKRBSH111,215BSH111,235
DescriptionMOSFET 55V N-channel Trench MOSFETMOSFET N-CH 55V 335MA SOT-23MOSFET N-CH 55V 0.335A SOT23
ManufacturerNexperiaNXP-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current210 mA--
Rds On Drain Source Resistance4 Ohms--
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge0.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation364 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel Trench MOSFET--
BrandNexperia--
Fall Time4.8 ns--
Product TypeMOSFET--
Rise Time8.4 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12.6 ns--
Typical Turn On Delay Time8.3 ns--
Unit Weight0.000282 oz--
Hersteller Teil # Beschreibung RFQ
Nexperia
Nexperia
BSH111BKR MOSFET 55V N-channel Trench MOSFET
BSH114,215 MOSFET TAPE7 PWR-MO
BSH111,215 MOSFET N-CH 55V 335MA SOT-23
BSH111,235 MOSFET N-CH 55V 0.335A SOT23
BSH111BKR MOSFET N-CH 55V SOT-23
BSH114,215 MOSFET N-CH 100V 500MA SOT23
BSH111 PB Neu und Original
BSH111 ROSH Neu und Original
BSH111 PB-FREE Neu und Original
BSH111 S2 Neu und Original
BSH111 T/R Neu und Original
BSH111,125 Neu und Original
BSH111,215 , TDZGTR24 , Neu und Original
BSH111.115 Neu und Original
BSH111.215 INSTOCK
BSH111/WK3 Neu und Original
BSH111125 Neu und Original
BSH111215 MOSFET N-CH TRNCH 55V 335MA
BSH111235 Neu und Original
BSH111BK Neu und Original
BSH111BKR 4E.W4T Neu und Original
BSH111T/R Neu und Original
BSH112 Neu und Original
BSH112 ,235 Neu und Original
BSH112235 Now Nexperia BSH112 - Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
BSH112T3 Neu und Original
BSH113 Neu und Original
BSH114 Small Signal Field-Effect Transistor, 0.85A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
BSH114 , TDZGTR27 , J40 Neu und Original
BSH114+215 Now Nexperia BSH114 - Small Signal Field-Effect Transistor, 0.85A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
BSH114215 Now Nexperia BSH114 - Small Signal Field-Effect Transistor, 0.85A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
BSH115 Neu und Original
BSH111BKR-CUT TAPE Neu und Original
BSH114,215-CUT TAPE Neu und Original
BSH111 MOSFET N-CH 55V 210MA AUTO TO-236AB, RL
NXP Semiconductors
NXP Semiconductors
BSH112,235 MOSFET N-CH 60V 300MA SOT-23
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