PartNumber | BSH111BKR | BSH111,215 | BSH111,235 |
Description | MOSFET 55V N-channel Trench MOSFET | MOSFET N-CH 55V 335MA SOT-23 | MOSFET N-CH 55V 0.335A SOT23 |
Manufacturer | Nexperia | NXP | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-23-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 55 V | - | - |
Id Continuous Drain Current | 210 mA | - | - |
Rds On Drain Source Resistance | 4 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
Vgs Gate Source Voltage | 4.5 V | - | - |
Qg Gate Charge | 0.5 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 364 mW | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Transistor Type | 1 N-Channel Trench MOSFET | - | - |
Brand | Nexperia | - | - |
Fall Time | 4.8 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 8.4 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 12.6 ns | - | - |
Typical Turn On Delay Time | 8.3 ns | - | - |
Unit Weight | 0.000282 oz | - | - |
Hersteller | Teil # | Beschreibung | RFQ |
---|---|---|---|
Nexperia |
BSH111BKR | MOSFET 55V N-channel Trench MOSFET | |
BSH114,215 | MOSFET TAPE7 PWR-MO | ||
BSH111,215 | MOSFET N-CH 55V 335MA SOT-23 | ||
BSH111,235 | MOSFET N-CH 55V 0.335A SOT23 | ||
BSH111BKR | MOSFET N-CH 55V SOT-23 | ||
BSH114,215 | MOSFET N-CH 100V 500MA SOT23 | ||
BSH111 PB | Neu und Original | ||
BSH111 ROSH | Neu und Original | ||
BSH111 PB-FREE | Neu und Original | ||
BSH111 S2 | Neu und Original | ||
BSH111 T/R | Neu und Original | ||
BSH111,125 | Neu und Original | ||
BSH111,215 , TDZGTR24 , | Neu und Original | ||
BSH111.115 | Neu und Original | ||
BSH111.215 | INSTOCK | ||
BSH111/WK3 | Neu und Original | ||
BSH111125 | Neu und Original | ||
BSH111215 | MOSFET N-CH TRNCH 55V 335MA | ||
BSH111235 | Neu und Original | ||
BSH111BK | Neu und Original | ||
BSH111BKR 4E.W4T | Neu und Original | ||
BSH111T/R | Neu und Original | ||
BSH112 | Neu und Original | ||
BSH112 ,235 | Neu und Original | ||
BSH112235 | Now Nexperia BSH112 - Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | ||
BSH112T3 | Neu und Original | ||
BSH113 | Neu und Original | ||
BSH114 | Small Signal Field-Effect Transistor, 0.85A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | ||
BSH114 , TDZGTR27 , J40 | Neu und Original | ||
BSH114+215 | Now Nexperia BSH114 - Small Signal Field-Effect Transistor, 0.85A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | ||
BSH114215 | Now Nexperia BSH114 - Small Signal Field-Effect Transistor, 0.85A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | ||
BSH115 | Neu und Original | ||
BSH111BKR-CUT TAPE | Neu und Original | ||
BSH114,215-CUT TAPE | Neu und Original | ||
BSH111 | MOSFET N-CH 55V 210MA AUTO TO-236AB, RL | ||
NXP Semiconductors |
BSH112,235 | MOSFET N-CH 60V 300MA SOT-23 |