BSH111BKR

BSH111BKR
Mfr. #:
BSH111BKR
Hersteller:
Nexperia
Beschreibung:
MOSFET 55V N-channel Trench MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSH111BKR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSH111BKR DatasheetBSH111BKR Datasheet (P4-P6)BSH111BKR Datasheet (P7-P9)BSH111BKR Datasheet (P10-P12)BSH111BKR Datasheet (P13-P15)BSH111BKR Datasheet (P16-P17)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Nexperia
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
55 V
Id - Kontinuierlicher Drainstrom:
210 mA
Rds On - Drain-Source-Widerstand:
4 Ohms
Vgs th - Gate-Source-Schwellenspannung:
600 mV
Vgs - Gate-Source-Spannung:
4.5 V
Qg - Gate-Ladung:
0.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
364 mW
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
1 N-Channel Trench MOSFET
Marke:
Nexperia
Abfallzeit:
4.8 ns
Produktart:
MOSFET
Anstiegszeit:
8.4 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
12.6 ns
Typische Einschaltverzögerungszeit:
8.3 ns
Gewichtseinheit:
0.000282 oz
Tags
BSH111BKR, BSH111B, BSH111, BSH11, BSH1, BSH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH 55V 0.21A 3-Pin SOT-23 T/R / MOSFET N-CH 55V SOT-23
***ure Electronics
BSH111 Series 55 V 364 mW 0.5 nC N-Channel Surface Mount MOSFET - SOT-23
***nell
MOSFET, N-CH, 55V, 0.21A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 210mA; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 2.3ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 302mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***ure Electronics
NX138BK Series 60 V 265 mA 3.5 Ohm Surface Mount N-Channel Mosfet - SOT-23
***peria
NX138BK - 60 V, single N-channel Trench MOSFET
***nell
MOSFET, N-CH, 60V, 0.265A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 265mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 310mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***p One Stop Global
Trans MOSFET N-CH 60V 0.23A Automotive 3-Pin SOT-23 T/R
***ure Electronics
Single N-Channel 60V 3.5 Ohm 1 nC SIPMOS® Small Signal Mosfet - SOT-23
***ment14 APAC
MOSFET, N-CH, 60V, 0.23A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:230mA; Source Voltage Vds:60V; On Resistance
***nell
MOSFET, N-CH, 60V, 0.23A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 230mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 360mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 230 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3.5 / Gate-Source Voltage V = 20 / Fall Time ns = 8.2 / Rise Time ns = 3 / Turn-OFF Delay Time ns = 6.7 / Turn-ON Delay Time ns = 2.3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 360
***ure Electronics
Single N-Channel 60 V 7.5 Ohm 821 nC 570 W Silicon Mosfet - SOT-23
***ical
Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R
***ark
Mosfet, N-Ch, 60V, 0.23A, Sot-23 Rohs Compliant: Yes
***des Inc SCT
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 30±V VGS
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.1uF 50Volts X8R 0.1
***et
MOSFET BVDSS: 41V~60V SOT23 T&R 3K
***ure Electronics
Single N-Channel 50 V 3.5 Ohm 300 mW Silicon Surface Mount Mosfet - SOT-23
***ical
Trans MOSFET N-CH 50V 0.2A Automotive 3-Pin SOT-23 T/R
***nell
MOSFET, AEC-Q101, N CH, 50V, 0.2A, 0.3W; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.2V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
2N7002AQ Series 60 V 6 Ohm N-Channel Enhancement Mode Mosfet - SOT-23-3
***et
Transistor MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R
***ical
Trans MOSFET N-CH 60V 0.22A Automotive 3-Pin SOT-23 T/R
***p One Stop Global
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R
***ark
Mosfet, Aec-Q101, N-Ch, 60V, Sot-23-3 Rohs Compliant: Yes
***nell
MOSFET, AEC-Q101, N-CH, 60V, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4
Teil # Mfg. Beschreibung Aktie Preis
BSH111BKR
DISTI # 1727-2340-1-ND
NexperiaMOSFET N-CH 55V SOT-23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3007In Stock
  • 1000:$0.0615
  • 500:$0.0905
  • 100:$0.1689
  • 10:$0.3020
  • 1:$0.3300
BSH111BKR
DISTI # 1727-2340-6-ND
NexperiaMOSFET N-CH 55V SOT-23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3007In Stock
  • 1000:$0.0615
  • 500:$0.0905
  • 100:$0.1689
  • 10:$0.3020
  • 1:$0.3300
BSH111BKR
DISTI # 1727-2340-2-ND
NexperiaMOSFET N-CH 55V SOT-23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 3000:$0.0539
BSH111BKR
DISTI # BSH111BKR
NexperiaTrans MOSFET N-CH 55V 0.335A 3-Pin TO-263AB T/R - Tape and Reel (Alt: BSH111BKR)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.0280
  • 6000:$0.0277
  • 12000:$0.0270
  • 18000:$0.0263
  • 30000:$0.0257
BSH111BKR
DISTI # BSH111BKR
NexperiaTrans MOSFET N-CH 55V 0.335A 3-Pin TO-263AB T/R (Alt: BSH111BKR)
RoHS: Compliant
Min Qty: 27000
Container: Tape and Reel
Asia - 0
  • 27000:$0.0335
  • 54000:$0.0326
  • 81000:$0.0317
  • 135000:$0.0308
  • 270000:$0.0304
  • 675000:$0.0301
  • 1350000:$0.0293
BSH111BKR
DISTI # BSH111BKR
NexperiaTrans MOSFET N-CH 55V 0.335A 3-Pin TO-263AB T/R (Alt: BSH111BKR)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.0372
  • 6000:€0.0343
  • 12000:€0.0314
  • 18000:€0.0309
  • 30000:€0.0289
BSH111BKRNexperiaBSH111 Series 55 V 364 mW 0.5 nC N-Channel Surface Mount MOSFET - SOT-23
RoHS: Compliant
89Cut Tape/Mini-Reel
  • 1:$0.0720
  • 250:$0.0480
  • 500:$0.0460
  • 750:$0.0440
  • 1500:$0.0400
BSH111BKR
DISTI # 771-BSH111BKR
NexperiaMOSFET 55V N-channel Trench MOSFET
RoHS: Compliant
0
  • 1:$0.2900
  • 10:$0.1920
  • 100:$0.0800
  • 1000:$0.0550
  • 3000:$0.0430
  • 9000:$0.0370
  • 24000:$0.0350
  • 45000:$0.0320
  • 99000:$0.0280
BSH111BKR
DISTI # 1704850
NexperiaMOSFET N-CH 55V 210MA AUTO TO-236AB, RL3000
  • 3000:£0.0320
  • 6000:£0.0290
  • 15000:£0.0270
  • 30000:£0.0260
  • 75000:£0.0250
BSH111BKR
DISTI # BSH111BKR
NexperiaTransistor: N-MOSFET,unipolar,55V,0.13A,364mW,SOT23390
  • 5:$0.1080
  • 25:$0.0597
  • 100:$0.0475
  • 500:$0.0426
  • 3000:$0.0398
BSH111BKR
DISTI # 2575094
NexperiaMOSFET, N-CH, 55V, 0.21A, SOT-23-3
RoHS: Compliant
0
  • 5:£0.1740
  • 25:£0.1700
  • 100:£0.0546
  • 250:£0.0515
  • 500:£0.0483
Bild Teil # Beschreibung
BC856BLT1G

Mfr.#: BC856BLT1G

OMO.#: OMO-BC856BLT1G

Bipolar Transistors - BJT 100mA 80V PNP
TZX15C-TR

Mfr.#: TZX15C-TR

OMO.#: OMO-TZX15C-TR

Zener Diodes 15 Volt 0.5W 2%
MAX3042BEWE+

Mfr.#: MAX3042BEWE+

OMO.#: OMO-MAX3042BEWE-

RS-422/RS-485 Interface IC Quad 5V RS-485 RS-422 Trx
LND150N3-G

Mfr.#: LND150N3-G

OMO.#: OMO-LND150N3-G

MOSFET 500V 1KOhm
DN2540N5-G

Mfr.#: DN2540N5-G

OMO.#: OMO-DN2540N5-G

MOSFET 400V 25Ohm
LND150N3-G-P002

Mfr.#: LND150N3-G-P002

OMO.#: OMO-LND150N3-G-P002

MOSFET DepletionMode MOSFET
BAT854AW,115

Mfr.#: BAT854AW,115

OMO.#: OMO-BAT854AW-115

Schottky Diodes & Rectifiers DIODE SCHOTTKY TAPE-7
IXTP08N100D2

Mfr.#: IXTP08N100D2

OMO.#: OMO-IXTP08N100D2

MOSFET N-CH MOSFETS 1000V 800MA
IXTP3N100D2

Mfr.#: IXTP3N100D2

OMO.#: OMO-IXTP3N100D2

MOSFET N-CH MOSFETS (D2) 1000V 3A
TZX15C-TR

Mfr.#: TZX15C-TR

OMO.#: OMO-TZX15C-TR-VISHAY

Zener Diodes 15 Volt 0.5W 2%
Verfügbarkeit
Aktie:
76
Auf Bestellung:
2059
Menge eingeben:
Der aktuelle Preis von BSH111BKR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,28 $
0,28 $
10
0,19 $
1,92 $
100
0,08 $
8,00 $
1000
0,06 $
55,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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