 |  | | |
| PartNumber | BSH111BKR | BSH111BK | BSH111BKR 4E.W4T |
| Description | MOSFET 55V N-channel Trench MOSFET | ||
| Manufacturer | Nexperia | NEXPERIA | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 210 mA | - | - |
| Rds On Drain Source Resistance | 4 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 0.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 364 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel Trench MOSFET | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 4.8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8.4 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12.6 ns | - | - |
| Typical Turn On Delay Time | 8.3 ns | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
BSH111BKR | MOSFET 55V N-channel Trench MOSFET | |
| BSH111BKR | MOSFET N-CH 55V SOT-23 | ||
| BSH111BK | Neu und Original | ||
| BSH111BKR 4E.W4T | Neu und Original | ||
| BSH111BKR-CUT TAPE | Neu und Original |