 | | | |
| PartNumber | BSM75GAR120DN2 | BSM75GAR120D | BSM75GAR120DN2HOSA1 |
| Description | IGBT Transistors 1200V 100A GAR CH | IGBT 2 MED POWER 34MM-1 | |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | IS4 (34 mm )-5 | - | - |
| Mounting Style | Chassis Mount | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.5 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 100 A | - | - |
| Pd Power Dissipation | 625 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Height | 30.5 mm | - | - |
| Length | 94 mm | - | - |
| Width | 34 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Continuous Collector Current | 105 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | BSM75GAR120DN2HOSA1 SP000100462 | - | - |
| Unit Weight | 5.436423 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSM75GAR120DN2 | IGBT Transistors 1200V 100A GAR CH | |
| BSM75GAR120DN2HOSA1 | IGBT 2 MED POWER 34MM-1 | ||
| BSM75GAR120DN2 | IGBT Transistors 1200V 100A GAR CH | ||
| BSM75GAR120D | Neu und Original | ||
| BSM75GAR170DN2 | Neu und Original |