BSO201

BSO201SP H vs BSO201SPHXUMA1 vs BSO201SPNTMA1

 
PartNumberBSO201SP HBSO201SPHXUMA1BSO201SPNTMA1
DescriptionMOSFET P-Ch -20V -14.9A DSO-8 OptiMOS PMOSFET P-Ch -20V -14.9A DSO-8 OptiMOS PMOSFET P-CH 20V 14.9A 8-SOIC
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current14.9 A14.9 A-
Rds On Drain Source Resistance6.7 mOhms6.7 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage12 V12 V-
Qg Gate Charge- 88 nC- 88 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOS--
PackagingReelReel-
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
SeriesOptiMOS PBSO201-
Transistor Type1 P-Channel1 P-Channel-
Width3.9 mm3.9 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min40 S40 S-
Fall Time162 ns162 ns-
Moisture SensitiveYesYes-
Product TypeMOSFETMOSFET-
Rise Time99 ns99 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time99 ns99 ns-
Typical Turn On Delay Time21 ns21 ns-
Part # AliasesBSO201SPHXUMA1 BSO21SPHXT SP000613828BSO201SP BSO21SPHXT H SP000613828-
Unit Weight0.019048 oz0.019048 oz-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
BSO201SP H MOSFET P-Ch -20V -14.9A DSO-8 OptiMOS P
BSO201SPHXUMA1 MOSFET P-Ch -20V -14.9A DSO-8 OptiMOS P
BSO201SPHXUMA1 MOSFET P-CH 20V 12A 8SOIC
BSO201SPNTMA1 MOSFET P-CH 20V 14.9A 8-SOIC
BSO201SP MOSFET P-Ch -20V -14.9A DSO-8
BSO201SP H Trans MOSFET P-CH 20V 14.9A 8-Pin DSO T/R - Bulk (Alt: BSO201SPH)
BSO201SPH Power Field-Effect Transistor, 9.3A I(D), 20V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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