 |  | | |
| PartNumber | BSO615CGHUMA1 | BSO615CG | BSO615CGHUMA1 , TDZV7.5 |
| Description | MOSFET N and P-Ch 60V 3.1A, -2A DSO-8 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 3.1 A, 2 A | - | - |
| Rds On Drain Source Resistance | 70 mOhms, 190 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V, 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 22.5 nC, 20 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Series | BSO615 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 2.25 S, 1.2 S | - | - |
| Fall Time | 18 ns, 90 ns | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 75 ns, 105 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns, 125 ns | - | - |
| Typical Turn On Delay Time | 16 ns, 24 ns | - | - |
| Part # Aliases | BSO615C BSO615CGXT G SP000216311 | - | - |
| Unit Weight | 0.019048 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSO615CGHUMA1 | MOSFET N and P-Ch 60V 3.1A, -2A DSO-8 | |
| BSO615CGHUMA1 | MOSFET N/P-CH 60V 3.1A/2A 8SOIC | ||
| BSO615CG | Neu und Original | ||
| BSO615CGHUMA1 , TDZV7.5 | Neu und Original |