 | |  | |
| PartNumber | BSP320SH6433XTMA1 | BSP320SH6327XTSA1 | BSP320SL6327HTSA1 |
| Description | MOSFET SIPMOS Sm-Signal 60V 120mOhm 2.9A | MOSFET N-Ch 60V 2.9A SOT-223-3 | MOSFET N-CH 60V 2.9A SOT-223 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-223-4 | SOT-223-4 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 2.9 A | 2.9 A | - |
| Rds On Drain Source Resistance | 120 mOhms | 120 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 9.7 nC | 12 nC | - |
| Minimum Operating Temperature | - 50 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.8 W | 1.8 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 1.6 mm | 1.6 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | BSP320 | BSP320 | - |
| Transistor Type | 1 P-Channel | 1 N-Channel | - |
| Width | 3.5 mm | 3.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 2.5 S | 2.5 S | - |
| Fall Time | 35 ns | 35 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 25 ns | 25 ns | - |
| Factory Pack Quantity | 4000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 25 ns | 25 ns | - |
| Typical Turn On Delay Time | 11 ns | 11 ns | - |
| Part # Aliases | BSP320S H6433 SP001058772 | BSP320S H6327 SP001058768 | - |
| Unit Weight | 0.003951 oz | 0.003951 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
BSP33,115 | Bipolar Transistors - BJT TRANS MED PWR TAPE-7 | |
| BSP33,115 | Bipolar Transistors - BJT TRANS MED PWR TAPE-7 | ||
Infineon Technologies |
BSP322PH6327XTSA1 | MOSFET P-Ch -100V 1A SOT-223-3 | |
| BSP320SH6433XTMA1 | MOSFET SIPMOS Sm-Signal 60V 120mOhm 2.9A | ||
| BSP321PH6327XTSA1 | MOSFET SIPMOS Sm-Signal 900mOhm -100V 980mA | ||
| BSP324H6327XTSA1 | MOSFET N-Ch 400V 170mA SOT-223-3 | ||
| BSP320SH6327XTSA1 | MOSFET N-Ch 60V 2.9A SOT-223-3 | ||
| BSP320SL6327HTSA1 | MOSFET N-CH 60V 2.9A SOT-223 | ||
| BSP320SL6433HTMA1 | MOSFET N-CH 60V 2.9A SOT-223 | ||
| BSP321PH6327XTSA1 | MOSFET P-CH 100V 980MA SOT223 | ||
| BSP321PL6327HTSA1 | MOSFET P-CH 100V 0.98A SOT-223 | ||
| BSP322PH6327XTSA1 | MOSFET P-CH 100V 1A SOT-223 | ||
| BSP322PL6327HTSA1 | MOSFET P-CH 100V 1A SOT-223 | ||
| BSP324L6327HTSA1 | MOSFET N-CH 400V 170MA SOT-223 | ||
| BSP320SH6433XTMA1 | MOSFET N-CH 60V 2.9A SOT223 | ||
| BSP324 E6327 | MOSFET N-CH 400V 170MA SOT-223 | ||
| BSP324H6327XTSA1 | MOSFET N-CH 400V 170MA SOT-223 | ||
| BSP320SH6327XTSA1 | IGBT Transistors MOSFET N-Ch 60V 2.9A SOT-223-3 | ||
| BSP33 T/R | Bipolar Transistors - BJT TRANS MED PWR TAPE-7 | ||
| BSP33TA | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin | ||
| BSP320SL6327HTSA1375 | Neu und Original | ||
| BSP32115 | Now Nexperia BSP32 - Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin | ||
| BSP321P | Neu und Original | ||
| BSP321P H6327 | Neu und Original | ||
| BSP321P L6327 | MOSFET P-Ch -100V 980mA SOT-223-3 | ||
| BSP321PH6327 | Neu und Original | ||
| BSP321PH6327XTSA1782 | - Bulk (Alt: BSP321PH6327XTSA1782) | ||
| BSP322P H6327 | MOSFETs | ||
| BSP322P L6327 | MOSFET P-Ch -100V 1A SOT-223-3 | ||
| BSP324 | MOSFET, N, SOT-223 | ||
| BSP324 H6327 | N-CH MOS-FET 0,17A 400V SOT223 | ||
| BSP324 L6327 | MOSFET N-Ch 400V 170mA SOT-223-3 | ||
| BSP33115 | Neu und Original | ||
| BSP3410G | Neu und Original | ||
| BSP350 | Neu und Original | ||
| BSP350 , TEA19162T/2J , | Neu und Original | ||
| BSP3505D B3 | Neu und Original | ||
| BSP3505D-PO-B3 | Neu und Original | ||
| BSP350E6327 | Neu und Original | ||
| BSP350CHIP | Neu und Original | ||
| BSP324H6327XTSA1-CUT TAPE | Neu und Original | ||
| BSP320SL6327 | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP320SL6433 | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP321PL6327 | - Bulk (Alt: BSP321PL6327) | ||
| BSP322PL6327 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP324L6327 | Power Field-Effect Transistor, 0.17A I(D), 400V, 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP322P | Neu und Original | ||
| BSP322PH6327 | Neu und Original | ||
| BSP33 | INSTOCK | ||
| BSP350 E6327 | Neu und Original |