 |  | | |
| PartNumber | BSP125 H6327 | BSP125 E6327 | BSP125 E6433 |
| Description | MOSFET N-Ch 600V 120mA SOT-223-3 | MOSFET N-CH 600V 120MA SOT-223 | MOSFET N-CH 600V 120MA SOT-223 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 120 mA | - | - |
| Rds On Drain Source Resistance | 25 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 6.6 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | BSP125 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 60 mS | - | - |
| Fall Time | 110 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 14.4 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 7.7 ns | - | - |
| Part # Aliases | BSP125H6327XTSA1 SP001058576 | - | - |
| Unit Weight | 0.003951 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP125 H6433 | MOSFET N-Ch 600V 120mA SOT-223-3 | |
| BSP125H6433XTMA1 | MOSFET N-Ch 600V 120mA SOT-223-3 | ||
| BSP125H6327XTSA1 | MOSFET N-Ch 600V 120mA SOT-223-3 | ||
| BSP125 H6327 | MOSFET N-Ch 600V 120mA SOT-223-3 | ||
| BSP125L6327HTSA1 | MOSFET N-CH 600V 120MA SOT-223 | ||
| BSP125L6433HTMA1 | MOSFET N-CH 600V 120MA SOT-223 | ||
| BSP125 E6327 | MOSFET N-CH 600V 120MA SOT-223 | ||
| BSP125 E6433 | MOSFET N-CH 600V 120MA SOT-223 | ||
| BSP125H6433XTMA1 | IGBT Transistors MOSFET N-Ch 600V 120mA SOT-223-3 | ||
| BSP125H6327XTSA1 | IGBT Transistors MOSFET N-Ch 600V 120mA SOT-223-3 | ||
| BSP125 H6433 | MOSFET N-Ch 600V 120mA SOT-223-3 | ||
| BSP125H6327XTSA1/SN | Trans MOSFET N-CH 600V 0.12A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP125H6327XTSA1) | ||
| BSP125E6433 | SIPMOS SMALL-SIGNAL TRANSISTOR | ||
| BSP125 | MOSFET, N, SOT-223 | ||
| BSP125 H6327 | Trans MOSFET N-CH 600V 0.12A Automotive 4-Pin(3+Tab) SOT-223 T/R | ||
| BSP125 H6327 , TEA1532CT | Neu und Original | ||
| BSP125 L6327 | Trans MOSFET N-CH 600V 0.12A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: BSP125L6327) | ||
| BSP125H6327 | 600V,4.5��,0.12A,N-Channel Power MOSFET | ||
| BSP125L6327 | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP125L6327XT | Neu und Original | ||
| BSP125L6433 | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |