 |  | |
| PartNumber | BSP296E6327 | BSP296E6327-01 |
| Description | MOSFET N-Ch 100V 1.1A SOT-223-3 | INSTOCK |
| Manufacturer | Infineon | - |
| Product Category | MOSFET | - |
| RoHS | N | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-223-4 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - |
| Id Continuous Drain Current | 1.1 A | - |
| Rds On Drain Source Resistance | 620 mOhms | - |
| Vgs Gate Source Voltage | 20 V | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 1.79 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | - |
| Height | 1.6 mm | - |
| Length | 6.5 mm | - |
| Product | MOSFET Small Signal | - |
| Transistor Type | 1 N-Channel | - |
| Type | SIPMOS Small Signal Transistor | - |
| Width | 3.5 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 1.2 S / 0.6 S | - |
| Fall Time | 21.4 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 7.9 ns | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 37.4 ns | - |
| Typical Turn On Delay Time | 5.2 ns | - |
| Unit Weight | 0.003951 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP296E6327 | MOSFET N-Ch 100V 1.1A SOT-223-3 | |
| BSP296E6327-01 | INSTOCK | ||
Infineon Technologies |
BSP296E6327 | MOSFET N-CH 100V 1.1A SOT223 |