BSS209

BSS209PWH6327XTSA1 vs BSS209PW L6327 vs BSS209PW

 
PartNumberBSS209PWH6327XTSA1BSS209PW L6327BSS209PW
DescriptionMOSFET P-Ch -20V -630mA SOT-323-3MOSFET P-Ch -20V 580mA SOT-323-3MOSFET P-CH 20V 580MA SOT-323
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3SOT-323-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current630 mA580 mA-
Rds On Drain Source Resistance550 mOhms550 mOhms-
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage4.5 V12 V-
Qg Gate Charge- 1 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation300 mW520 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height0.9 mm0.9 mm-
Length2 mm2 mm-
SeriesBSS209BSS209-
Transistor Type1 P-Channel1 P-Channel-
Width1.25 mm1.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min870 mS--
Fall Time4.6 ns5.8 ns-
Product TypeMOSFETMOSFET-
Rise Time7 ns5.8 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time6 ns7.6 ns-
Typical Turn On Delay Time2.6 ns4.4 ns-
Part # AliasesBSS209PW BSS29PWH6327XT H6327 SP000750498BSS209PWL6327XT-
Unit Weight0.000176 oz0.000176 oz-
Product-MOSFET Small Signal-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
BSS209PWH6327XTSA1 MOSFET P-Ch -20V -630mA SOT-323-3
BSS209PW MOSFET P-CH 20V 580MA SOT-323
BSS209PW L6327 MOSFET P-CH 20V 580MA SOT-323
BSS209PWH6327XTSA1 MOSFET P-CH 20V 0.63A SOT-323
Infineon Technologies
Infineon Technologies
BSS209PW L6327 MOSFET P-Ch -20V 580mA SOT-323-3
BSS209 Neu und Original
BSS209PW H6327 Neu und Original
BSS209PW L6327 Neu und Original
BSS209PW6327 Neu und Original
BSS209PWH6327 INFINEON TRANS BSS209PWH6327XTSA1, RL
BSS209PWH6327XTSA1INFINE Neu und Original
BSS209PWL6327 Neu und Original
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