 | | | |
| PartNumber | BUK9606-40B,118 | BUK9605-30A,118 | BUK9604-40A,118 |
| Description | MOSFET HIGH PERF TRENCHMOS | MOSFET TAPE13 PWR-MOS | MOSFET TAPE13 MOSFET |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 30 V | 40 V |
| Id Continuous Drain Current | 129 A | 75 A | 198 A |
| Rds On Drain Source Resistance | 5 mOhms | 4.6 mOhms | 4 mOhms |
| Vgs Gate Source Voltage | 15 V | 10 V | 15 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 203 W | 230 W | 300 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 4.5 mm | 4.5 mm | 4.5 mm |
| Length | 10.3 mm | 10.3 mm | 10.3 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.4 mm | 9.4 mm | 9.4 mm |
| Brand | Nexperia | Nexperia | Nexperia |
| Fall Time | 92 ns | 320 ns | 306 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 145 ns | 220 ns | 309 ns |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 132 ns | 345 ns | 365 ns |
| Typical Turn On Delay Time | 43 ns | 45 ns | 62 ns |
| Part # Aliases | /T3 BUK9606-40B | /T3 BUK9605-30A | /T3 BUK9604-40A |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
BUK9606-40B,118 | MOSFET HIGH PERF TRENCHMOS | |
| BUK9608-55B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK9606-75B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK9609-40B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK9605-30A,118 | MOSFET TAPE13 PWR-MOS | ||
| BUK9606-55B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK9610-100B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK9608-55A,118 | MOSFET TAPE13 PWR-MOS | ||
| BUK9606-55A,118 | MOSFET TAPE13 PWR-MOS | ||
| BUK9609-75A,118 | MOSFET TAPE13 PWR-MOS | ||
| BUK9604-40A,118 | MOSFET TAPE13 MOSFET | ||
| BUK9606-75B,118 | Darlington Transistors MOSFET HIGH PERF TRENCHMOS | ||
| BUK9608-55A,118 | Darlington Transistors MOSFET TAPE13 PWR-MOS | ||
| BUK9610-100B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK9605-30A,118 | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS | ||
| BUK9604-40A,118 | RF Bipolar Transistors MOSFET TAPE13 MOSFET | ||
| BUK9606-55A,118 | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS | ||
| BUK9609-75A,118 | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS | ||
| BUK9606-55B,118 | RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS | ||
| BUK9606-40B,118 | RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS | ||
| BUK9608-55B,118 | RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS | ||
| BUK9607-30B,118 | RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS | ||
| BUK9609-40B,118 | RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS | ||
NXP Semiconductors |
BUK9608-55,118 | MOSFET N-CH 55V 75A D2PAK | |
| BUK9609-55A,118 | MOSFET N-CH 55V 75A D2PAK | ||
| BUK9610-55A,118 | MOSFET N-CH 55V 75A D2PAK | ||
| BUK9611-55A,118 | MOSFET N-CH 55V 75A D2PAK | ||
| BUK9606-75B /T3 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK9605-30A | Neu und Original | ||
| BUK9605-30A118 | Now Nexperia BUK9605-30A - Power Field-Effect Transistor, D2PAK | ||
| BUK9606-40B | Neu und Original | ||
| BUK9606-55A118 | Now Nexperia BUK9606-55A - Power Field-Effect Transistor, 75A I(D), 55V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK9606-75B118 | - Bulk (Alt: BUK9606-75B118) | ||
| BUK9607-30B | Neu und Original | ||
| BUK9607-30B118 | - Bulk (Alt: BUK9607-30B118) | ||
| BUK9608-55A | Neu und Original | ||
| BUK9608-55A118 | Now Nexperia BUK9608-55A - Power Field-Effect Transistor, 125A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK9608-55B | Neu und Original | ||
| BUK9608-55B118 | - Bulk (Alt: BUK9608-55B118) | ||
| BUK9609-40B | Neu und Original | ||
| BUK9609-55A118 | - Bulk (Alt: BUK9609-55A118) | ||
| BUK9609-75A | Neu und Original | ||
| BUK9609-75B | Neu und Original | ||
| BUK9610-100B | Neu und Original | ||
| BUK9610-100B118 | Now Nexperia BUK9610-100B - Power Field-Effect Transistor, 110A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK9610-55A | Neu und Original | ||
| BUK9608-55 | Neu und Original | ||
| BUK9609-55A | Neu und Original | ||
| BUK9611-55A | Neu und Original | ||
| BUK9606-75B | Neu und Original |