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BUK961R

BUK961R6-40E,118 vs BUK961R4-30E,118 vs BUK961R5-30E,118

 
PartNumberBUK961R6-40E,118BUK961R4-30E,118BUK961R5-30E,118
DescriptionMOSFET N-Chan 40V 120AMOSFET N-CH 30V 120A D2PAKIGBT Transistors MOSFET BUK961R5-30E/D2PAK/REEL13
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current120 A--
Rds On Drain Source Resistance1.6 mOhms--
Vgs th Gate Source Threshold Voltage1.7 V--
Vgs Gate Source Voltage15 V--
Qg Gate Charge120 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation357 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel--
Transistor Type1 N-Channel--
BrandNexperia--
Fall Time119 ns--
Product TypeMOSFET--
Rise Time118 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time195 ns--
Typical Turn On Delay Time95 ns--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
Nexperia
Nexperia 		BUK961R6-40E,118 MOSFET N-Chan 40V 120A
BUK961R6-40E,118 IGBT Transistors MOSFET N-Chan 40V 120A
NXP Semiconductors
NXP Semiconductors 		BUK961R4-30E,118 MOSFET N-CH 30V 120A D2PAK
BUK961R7-40E,118 MOSFET N-CH 40V 120A D2PAK
BUK961R5-30E,118 IGBT Transistors MOSFET BUK961R5-30E/D2PAK/REEL13
BUK961R5-30E118 Now Nexperia BUK961R5-30E - Power Field-Effect Transistor, D2PAK
BUK961R6-40E MOSFET, N CHANNEL, 40V, 120A, D2PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.00117ohm, Rds(on) Test Voltage Vgs:10V,
BUK961R7-40E118 - Bulk (Alt: BUK961R7-40E118)
BUK961R4-30E Neu und Original
BUK961R5-30E Neu und Original
BUK961R7-40E Neu und Original
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