 | |  | |
| PartNumber | BUK962R5-60E,118 | BUK962R6-40E,118 | BUK962R8-30B,118 |
| Description | MOSFET N-channel TrenchMOS intermed level FET | MOSFET N-channel TrenchMOS logic level FET | MOSFET HIGH PERF TRENCHMOS |
| Manufacturer | Nexperia | Nexperia | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 40 V | - |
| Id Continuous Drain Current | 120 A | 100 A | - |
| Rds On Drain Source Resistance | 2.5 mOhms | 2.35 mOhms | - |
| Vgs Gate Source Voltage | 2.1 V | 15 V | - |
| Pd Power Dissipation | 357 W | 263 W | - |
| Configuration | Single | Single | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Nexperia | Nexperia | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.139332 oz | - | - |
| Vgs th Gate Source Threshold Voltage | - | 1.7 V | - |
| Qg Gate Charge | - | 80.6 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 84 ns | - |
| Rise Time | - | 93 ns | - |
| Typical Turn Off Delay Time | - | 131 ns | - |
| Typical Turn On Delay Time | - | 52 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
BUK962R5-60E,118 | MOSFET N-channel TrenchMOS intermed level FET | |
| BUK962R6-40E,118 | MOSFET N-channel TrenchMOS logic level FET | ||
| BUK962R8-60E,118 | MOSFET N-channel TrenchMOS logic level FET | ||
| BUK962R8-60E,118 | Darlington Transistors MOSFET N-channel TrenchMOS logic level FET | ||
| BUK962R6-40E,118 | Darlington Transistors MOSFET N-channel TrenchMOS logic level FET | ||
| BUK962R8-30B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK962R5-60E,118 | MOSFET N-channel TrenchMOS intermed level FET | ||
NXP Semiconductors |
BUK962R1-40E,118 | MOSFET N-CH 40V 120A D2PAK | |
| BUK962R5-60E118 | Neu und Original | ||
| BUK962R1-40E118 | - Bulk (Alt: BUK962R1-40E118) | ||
| BUK962R6-40E118 | Now Nexperia BUK962R6-40E - Power Field-Effect Transistor, 100A I(D), 40V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK962R8-60E118 | Now Nexperia BUK962R8-60E - Power Field-Effect Transistor, 120A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK962R1-40E | Neu und Original |