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| PartNumber | BUK963R3-60E,118 | BUK963R1-40E,118 | BUK963R2-40B,118 |
| Description | MOSFET N-channel TrenchMOS logic level FET | MOSFET N-channel TrenchMOS logic level FET | MOSFET HIGH PERF TRENCHMOS |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 40 V | 40 V |
| Id Continuous Drain Current | 120 A | 100 A | 222 A |
| Rds On Drain Source Resistance | 2.73 mOhms | 2.6 mOhms | 2.8 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.7 V | 1.7 V | - |
| Vgs Gate Source Voltage | 15 V | 10 V | 15 V |
| Qg Gate Charge | 95 nC | 69.5 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 293 W | 234 W | 300 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Nexperia | Nexperia | Nexperia |
| Fall Time | 109 ns | 76 ns | 192 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 100 ns | 73 ns | 268 ns |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 158 ns | 114 ns | 257 ns |
| Typical Turn On Delay Time | 54 ns | 42 ns | 68 ns |
| Unit Weight | - | 0.139332 oz | - |
| Height | - | - | 4.5 mm |
| Length | - | - | 10.3 mm |
| Width | - | - | 9.4 mm |
| Part # Aliases | - | - | /T3 BUK963R2-40B |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
BUK963R3-60E,118 | MOSFET N-channel TrenchMOS logic level FET | |
| BUK963R1-40E,118 | MOSFET N-channel TrenchMOS logic level FET | ||
| BUK963R2-40B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK963R3-60E,118 | Darlington Transistors MOSFET N-channel TrenchMOS logic level FET | ||
| BUK963R1-40E,118 | Darlington Transistors MOSFET N-channel TrenchMOS logic level FET | ||
| BUK963R2-40B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK963R1-40E118 | - Bulk (Alt: BUK963R1-40E118) | ||
| BUK963R2-40B118 | Now Nexperia BUK963R2-40B - Power Field-Effect Transistor, 100A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK963R3-60E118 | Now Nexperia BUK963R3-60E - Power Field-Effect Transistor, 120A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |