 | | | |
| PartNumber | BUK964R2-55B,118 | BUK964R1-40E,118 | BUK964R2-60E,118 |
| Description | MOSFET HIGH PERF TRENCHMOS | MOSFET N-channel TrenchMOS logic level FET | MOSFET BUK964R2-60E/D2PAK/REEL 13" Q1 |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 55 V | 40 V | - |
| Id Continuous Drain Current | 191 A | 75 A | - |
| Rds On Drain Source Resistance | 3.7 mOhms | 3.4 mOhms | - |
| Vgs Gate Source Voltage | 15 V | 15 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | 182 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 4.5 mm | - | - |
| Length | 10.3 mm | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.4 mm | - | - |
| Brand | Nexperia | Nexperia | Nexperia |
| Fall Time | 178 ns | 60 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 232 ns | 64 ns | - |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 273 ns | 88 ns | - |
| Typical Turn On Delay Time | 63 ns | 34 ns | - |
| Part # Aliases | /T3 BUK964R2-55B | - | - |
| Vgs th Gate Source Threshold Voltage | - | 1.7 V | - |
| Qg Gate Charge | - | 52.1 nC | - |
| Unit Weight | - | 0.050608 oz | 0.077603 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
BUK964R4-40B,118 | MOSFET HIGH PERF TRENCHMOS | |
| BUK964R2-55B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK964R1-40E,118 | MOSFET N-channel TrenchMOS logic level FET | ||
| BUK964R7-80E,118 | MOSFET BUK964R7-80E/D2PAK/REEL 13" Q1 | ||
| BUK964R2-80E,118 | MOSFET N-Chan 80V 120A | ||
| BUK964R2-60E,118 | MOSFET BUK964R2-60E/D2PAK/REEL 13" Q1 | ||
| BUK964R8-60E,118 | MOSFET BUK964R8-60E/D2PAK/REEL 13" Q1 | ||
| BUK964R2-60E,118 | MOSFET N-CH 60V 100A D2PAK | ||
| BUK964R8-60E,118 | MOSFET N-CH 60V 100A D2PAK | ||
| BUK964R1-40E,118 | Darlington Transistors MOSFET N-channel TrenchMOS logic level FET | ||
| BUK964R2-80E,118 | IGBT Transistors MOSFET N-Chan 80V 120A | ||
| BUK964R7-80E,118 | IGBT Transistors MOSFET BUK964R7-80E/D2PAK/REEL13 | ||
| BUK964R2-55B,118 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK964R4-40B,118 | RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS | ||
| BUK964R1-40E | Neu und Original | ||
| BUK964R2-55B | Neu und Original | ||
| BUK964R2-60E118 | Neu und Original | ||
| BUK964R2-80E118 | Now Nexperia BUK964R2-80E - Power Field-Effect Transistor, 120A I(D), 80V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK964R4-40B | Neu und Original | ||
| BUK964R7-80E | Neu und Original | ||
| BUK964R7-80E118 | Neu und Original | ||
| BUK964R8-60E | MOSFET, N-CH, 60V, 100A, D2PAK | ||
| BUK964R8-60E118 | Neu und Original |