PartNumber | C3M0280090D | C3M0280090J-TR | C3M0280090J |
Description | MOSFET G3 SiC MOSFET 900V, 280mOhm | MOSFET G3 SiC MOSFET/ Reel 900V, 280 mOhm | MOSFET G3 SiC MOSFET 900V, 280 mOhm |
Manufacturer | Cree, Inc. | Cree, Inc. | Cree, Inc. |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | SiC | SiC | SiC |
Mounting Style | Through Hole | SMD/SMT | SMD/SMT |
Package / Case | TO-247-3 | TO-263-7 | TO-263-7 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 900 V | 900 V | 900 V |
Id Continuous Drain Current | 11.5 A | 11 A | 11 A |
Rds On Drain Source Resistance | 280 mOhms | 385 mOhms | 385 mOhms |
Vgs th Gate Source Threshold Voltage | 2.1 V | 1.8 V | 1.8 V |
Qg Gate Charge | 9.5 nC | 9.5 nC | 9.5 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 54 W | 50 W | 50 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Reel | Tube |
Height | 21.1 m | - | - |
Length | 16.13 mm | - | - |
Product | Power MOSFET | Power MOSFET | Power MOSFET |
Type | Silicon Carbide MOSFET | Silicon Carbide MOSFET | Silicon Carbide MOSFET |
Width | 5.21 mm | - | - |
Brand | Wolfspeed / Cree | Wolfspeed / Cree | Wolfspeed / Cree |
Fall Time | 7.5 ns | 4 ns | 4 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns | 6.5 ns | 6.5 ns |
Factory Pack Quantity | 30 | 800 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 17.5 ns | 11 ns | 11 ns |
Typical Turn On Delay Time | 26 ns | 10.5 ns | 10.5 ns |
Unit Weight | 1.340411 oz | 0.056438 oz | 0.056438 oz |
Vgs Gate Source Voltage | - | 18 V, - 8 V | 18 V, - 8 V |
Forward Transconductance Min | - | 3.1 S | 3.1 S |
Moisture Sensitive | - | Yes | - |