 |  |  | |
| PartNumber | CGH60030D-GP4 | CGH60008D-GP4 | CGH60015D-GP4 |
| Description | RF JFET Transistors GaN HEMT Die DC-6.0GHz, 30 Watt | RF JFET Transistors GaN HEMT Die DC-6.0GHz, 8 Watt | RF JFET Transistors GaN HEMT Die DC-6.0GHz, 15 Watt |
| Manufacturer | Cree, Inc. | Cree, Inc. | Cree, Inc. |
| Product Category | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
| RoHS | Y | Y | Y |
| Transistor Type | HEMT | HEMT | HEMT |
| Technology | GaN | GaN | GaN |
| Gain | 15 dB | 15 dB | 15 dB |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 120 V | 120 V | 120 V |
| Vgs Gate Source Breakdown Voltage | - 10 V to 2 V | - 10 V to 2 V | - 10 V to 2 V |
| Id Continuous Drain Current | 3 A | 0.75 A | 1.5 A |
| Output Power | 30 W | 8 W | 15 W |
| Maximum Drain Gate Voltage | - | - | - |
| Minimum Operating Temperature | - | - | - |
| Maximum Operating Temperature | - | - | - |
| Pd Power Dissipation | - | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | Die | Die | Die |
| Packaging | Waffle | Waffle | Waffle |
| Application | - | - | - |
| Configuration | Dual | Single | Single |
| Height | 100 um | 100 um | 100 um |
| Length | 1.66 mm | 820 um | 1.06 mm |
| Operating Frequency | 4 GHz to 6 GHz | 4 GHz to 6 GHz | 4 GHz to 6 GHz |
| Operating Temperature Range | - | - | - |
| Product | GaN HEMT | GaN HEMT | GaN HEMT |
| Width | 920 um | 920 um | 920 um |
| Brand | Wolfspeed / Cree | Wolfspeed / Cree | Wolfspeed / Cree |
| Gate Source Cutoff Voltage | - | - | - |
| Number of Channels | 2 Channel | - | - |
| Class | - | - | - |
| Development Kit | - | - | - |
| Fall Time | - | - | - |
| NF Noise Figure | - | - | - |
| P1dB Compression Point | - | - | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
| Rds On Drain Source Resistance | 500 mOhms | 1.6 Ohms | 1 Ohms |
| Rise Time | - | - | - |
| Factory Pack Quantity | 10 | 10 | 10 |
| Subcategory | Transistors | Transistors | Transistors |
| Typical Turn Off Delay Time | - | - | - |
| Vgs th Gate Source Threshold Voltage | - 3 V | - 3 V | - 3 V |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
N/A |
CGH60030D-GP4 | RF JFET Transistors GaN HEMT Die DC-6.0GHz, 30 Watt | |
| CGH60008D-GP4 | RF JFET Transistors GaN HEMT Die DC-6.0GHz, 8 Watt | ||
| CGH60060D-GP4 | RF JFET Transistors GaN HEMT Die DC-6.0GHz, 60 Watt | ||
| CGH60120D-GP4 | RF JFET Transistors GaN HEMT Die DC-6.0GHz, 120 Watt | ||
| CGH60015D-GP4 | RF JFET Transistors GaN HEMT Die DC-6.0GHz, 15 Watt | ||
| CGH60008D-GP4 | RF MOSFET HEMT 28V DIE | ||
| CGH60015D-GP4 | RF MOSFET HEMT 28V DIE | ||
| CGH60030D-GP4 | RF MOSFET HEMT 28V DIE | ||
| CGH60060D-GP4 | RF MOSFET HEMT 28V DIE | ||
| CGH60120D-GP4 | RF MOSFET HEMT 28V DIE | ||
Cornell Dubilier (CDE) |
CGH782T350X5L | Aluminum Electrolytic Capacitors - Screw Terminal 7800uF 350V-10+50% | |
| CGH742T250X3L | Aluminum Electrolytic Capacitors - Screw Terminal 7400uF 250V-10+50% | ||
| CGH732T350X5L | Aluminum Electrolytic Capacitors - Screw Terminal 350V 7300uF | ||
| CGH772T450X8L | Aluminum Electrolytic Capacitors - Screw Terminal 7700uF 450V-10+50% | ||
| CGH572T350X4L | Aluminum Electrolytic Capacitors - Screw Terminal 5700uF 350V-10+50% | ||
| CGH711T500V3C | Aluminum Electrolytic Capacitors - Screw Terminal 710uF 500V-10+50% | ||
| CGH772T450X8L | Aluminum Electrolytic Capacitors - Screw Terminal 7700uF 450V-10+50% | ||
| CGH782T350X5L | Aluminum Electrolytic Capacitors - Screw Terminal 7800uF 350V-10+50% | ||
| CGH732T350X5L | Aluminum Electrolytic Capacitors - Screw Terminal 350V 7300uF | ||
| CGH742T250X3L | Aluminum Electrolytic Capacitors - Screw Terminal 7400uF 250V-10+50% | ||
| CGH572T350X4L | Aluminum Electrolytic Capacitors - Screw Terminal 5700uF 350V-10+50% | ||
| CGH711T500V3C | Aluminum Electrolytic Capacitors - Screw Terminal 710uF 500V-10+50% | ||
| CGH74C2525M | Neu und Original | ||
| CGH80030D-GP4 | RF JFET Transistors GaN HEMT Die DC-8.0GHz, 30 Watt | ||
| CGH90120F | Neu und Original | ||
| CGH96050F2 | Neu und Original | ||
| CGHF96050F2 | Neu und Original | ||
| CGHI | Neu und Original | ||
| CGH5506194FLF | Thick Film Resistors - Through Hole | ||
| CGH5509534DLF | Thick Film Resistors - Through Hole | ||
| CGHK21256N8J-T | INSTOCK | ||
| CGH5506194DLF | Thick Film Resistors - Through Hole | ||
| CGHMI15500011010 | HMI, 15 Inch AL, 120VAC, 485 ETH | ||
| CGHMI10500011010 | HMI, 10 Inch AL, 120VAC, 485 ETH | ||
| CGHMI10600011010 | Display, HMI, 10 | ||
| CGHMI10500011011 | HMI, 10 Inch SS, 120VAC, 485 ETH | ||
| CGHMI15500011011 | HMI, 15 Inch SS, 120VAC, 485 ETH | ||
| CGH8 | Gas Discharge Tubes / Gas Plasma Arrestors GP HOLDER | ||
| CGH692T500X8L | Aluminum Electrolytic Capacitors - Screw Terminal 6900uF 500V-10+50% | ||
| CGH602T350X4L | Aluminum Electrolytic Capacitors - Screw Terminal 6000uF 350V-10+50% | ||
| CGH902T250W5L | Aluminum Electrolytic Capacitors - Screw Terminal 9000uF 250V-10+50% | ||
| CGH702T250W4L | Aluminum Electrolytic Capacitors - Screw Terminal 7000uF 250V-10+50% | ||
| CGH901T500V3L | Aluminum Electrolytic Capacitors - Screw Terminal 900uF 500V-10+50% | ||
| CGH621T450V2L | Aluminum Electrolytic Capacitors - Screw Terminal 620uF 450V-10+50% | ||
| CGH60015D | RF JFET Transistors DC-6GHz 15W GaN Gain@ 4GHz 15dB | ||
| CGH60008D | RF JFET Transistors DC-6GHz 8W GaN Gain@ 4GHz 15dB | ||
| CGH60030D | RF JFET Transistors DC-6GHz 30W GaN Gain@ 4GHz 15dB | ||
| CGH60060D | RF JFET Transistors DC-6GHz 60W GaN Gain@ 4GHz 13dB | ||
| CGH60120D | RF JFET Transistors DC-6GHz 120W GaN Gain@ 4GHz 13dB | ||
| CGH80030D | RF JFET Transistors |