CGHV145 stock, CGHV145, CGHV14500F


PartNumber	CGHV14500F	CGHV14500-TB
Description	RF JFET Transistors GaN HEMT 1.2-1.4GHz, 500 Watt	RF Development Tools Test Board without GaN HEMT
Manufacturer	Cree, Inc.	Cree, Inc.
Product Category	RF JFET Transistors	RF Development Tools
RoHS	Y	N
Transistor Type	HEMT	-
Technology	GaN	-
Gain	17.1 dB	-
Transistor Polarity	N-Channel	-
Vds Drain Source Breakdown Voltage	150 V	-
Vgs Gate Source Breakdown Voltage	- 10 V to 2 V	-
Id Continuous Drain Current	36 A	-
Output Power	510 W	-
Maximum Drain Gate Voltage	-	-
Minimum Operating Temperature	- 40 C	- 40 C
Maximum Operating Temperature	+ 130 C	+ 130 C
Pd Power Dissipation	-	-
Mounting Style	Screw Mount	-
Package / Case	440117	-
Packaging	Tube	Bulk
Application	-	-
Configuration	Single	-
Height	-	-
Length	-	-
Operating Frequency	1.2 GHz to 1.4 GHz	-
Operating Temperature Range	-	-
Product	GaN HEMT	Demonstration Boards
Width	-	-
Brand	Wolfspeed / Cree	Wolfspeed / Cree
Forward Transconductance Min	-	-
Gate Source Cutoff Voltage	-	-
Class	-	-
Development Kit	CGHV14500F-TB	-
Fall Time	-	-
NF Noise Figure	-	-
P1dB Compression Point	-	-
Product Type	RF JFET Transistors	RF Development Tools
Rds On Drain Source Resistance	-	-
Rise Time	-	-
Factory Pack Quantity	50	2
Subcategory	Transistors	Development Tools
Typical Turn Off Delay Time	-	-
Vgs th Gate Source Threshold Voltage	- 3 V	-
Type	-	RF Transistors
Tool Is For Evaluation Of	-	CGHV14500F
Frequency	-	1.2 GHz to 1.4 GHz
Operating Supply Voltage	-	-
Description/Function	-	Demonstration board for CGHV14500F
Dimensions	-	-
Interface Type	-	-
For Use With	-	CGHV14500F

Search Part Number : "CGHV145", Match & Start with "CGHV145" - Total : 5

Hersteller	Teil #	Beschreibung
N/A	CGHV14500F	RF JFET Transistors GaN HEMT 1.2-1.4GHz, 500 Watt
	CGHV14500-TB	RF Development Tools Test Board without GaN HEMT
	CGHV14500-TB	TEST FIXTURE FOR CGHV14500
	CGHV14500F	RF JFET Transistors 1.2-1.4GHz 500W GaN Gain 17.1dB
	CGHV14500F/P	Neu und Original

CGHV145