CGHV14500F

CGHV14500F
Mfr. #:
CGHV14500F
Hersteller:
N/A
Beschreibung:
RF JFET Transistors 1.2-1.4GHz 500W GaN Gain 17.1dB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CGHV14500F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CGHV14500F Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Wolfspeed / Cree
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Rohr
Montageart
Schraube
Betriebstemperaturbereich
-
Paket-Koffer
440117
Technologie
GaN SiC
Aufbau
Single
Transistor-Typ
HEMT
Gewinnen
17.1 dB
Klasse
-
Ausgangsleistung
510 W
Pd-Verlustleistung
-
Maximale-Betriebstemperatur
+ 130 C
Mindest-Betriebstemperatur
- 40 C
Anwendung
-
Arbeitsfrequenz
1.2 GHz to 1.4 GHz
ID-Dauer-Drain-Strom
36 A
Vds-Drain-Source-Breakdown-Voltage
150 V
Vgs-th-Gate-Source-Threshold-Voltage
- 3 V
Rds-On-Drain-Source-Widerstand
-
Transistor-Polarität
N-Kanal
Vorwärts-Transkonduktanz-Min
-
Entwicklungs-Kit
CGHV14500F-TB
Vgs-Gate-Source-Breakdown-Voltage
- 10 V to + 2 V
Gate-Source-Cutoff-Spannung
-
Maximum-Drain-Gate-Spannung
-
NF-Geräusch-Abbildung
-
P1dB-Kompressionspunkt
-
Tags
CGHV145, CGHV14, CGHV1, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***o-Tech
- 500W, 1200 - 1400MHz, GaN HEMT Flange Package
***i-Key
RF MOSFET HEMT 50V 440117
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Teil # Mfg. Beschreibung Aktie Preis
CGHV14500F
DISTI # CGHV14500F-ND
WolfspeedRF MOSFET HEMT 50V 440117
RoHS: Compliant
Min Qty: 1
Container: Tray
66In Stock
  • 1:$520.0000
CGHV14500-TB
DISTI # CGHV14500-TB-ND
WolfspeedTEST FIXTURE FOR CGHV14500
RoHS: Compliant
Min Qty: 1
Container: Box
2In Stock
  • 1:$632.5000
CGHV14500F
DISTI # 941-CGHV14500F
Cree, Inc.RF JFET Transistors GaN HEMT 1.2-1.4GHz, 500 Watt
RoHS: Compliant
36
  • 1:$583.4200
CGHV14500-TB
DISTI # 941-CGHV14500F-TB
Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Not compliant
2
  • 1:$617.0800
CGHV14500F
DISTI # CGHV14500F
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1:$629.4700
Bild Teil # Beschreibung
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OMO.#: OMO-CGHV14250F

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Mfr.#: CGHV14250F-TB

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OMO.#: OMO-CGHV1J025D-GP4-WOLFSPEED

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von CGHV14500F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
780,00 $
780,00 $
10
741,00 $
7 410,00 $
100
702,00 $
70 200,00 $
500
663,00 $
331 500,00 $
1000
624,00 $
624 000,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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