 |  | | |
| PartNumber | CSD16409Q3 | CSD16409Q3. | CSD16409Q3/BKN |
| Description | MOSFET N-Ch NexFET Power MOSFETs | ||
| Manufacturer | Texas Instruments | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | VSON-Clip-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 9.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Qg Gate Charge | 4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.6 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | NexFET | - | - |
| Packaging | Reel | - | - |
| Height | 1 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | CSD16409Q3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Texas Instruments | - | - |
| Forward Transconductance Min | 38 S | - | - |
| Fall Time | 3.4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10.6 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 6.3 ns | - | - |
| Typical Turn On Delay Time | 6.5 ns | - | - |
| Unit Weight | 0.001474 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Texas Instruments |
CSD16409Q3 | MOSFET N-Ch NexFET Power MOSFETs | |
| CSD16409Q3 | Neu und Original | ||
| CSD16409Q3. | Neu und Original | ||
| CSD16409Q3/BKN | Neu und Original |