 |  |  | |
| PartNumber | CSD18532NQ5B | CSD18532KCS | CSD18532 |
| Description | MOSFET 60V NCh NexFET Power MOSFET | MOSFET 60-V N-Chanel NxFT Pwr MOSFETs | |
| Manufacturer | Texas Instruments | Texas Instruments | TI |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | E | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Through Hole | Through Hole |
| Package / Case | VSON-CLIP-8 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 151 A | 169 A | - |
| Rds On Drain Source Resistance | 3.4 mOhms | 4.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.4 V | 1.5 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 49 nC | 44 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
| Pd Power Dissipation | 156 W | 250 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | NexFET | NexFET | NexFET |
| Packaging | Reel | Tube | Tube |
| Height | 1 mm | 16.51 mm | - |
| Length | 6 mm | 10.67 mm | - |
| Series | CSD18532NQ5B | CSD18532KCS | CSD18532KCS |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5 mm | 4.7 mm | - |
| Brand | Texas Instruments | Texas Instruments | - |
| Forward Transconductance Min | 140 S | 187 S | - |
| Fall Time | 2.7 ns | 5.6 ns | 5.6 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8.7 ns | 5.3 ns | 5.3 ns |
| Factory Pack Quantity | 2500 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns | 24.2 ns | 24.2 ns |
| Typical Turn On Delay Time | 8.2 ns | 7.8 ns | 7.8 ns |
| Unit Weight | 0.004727 oz | 0.211644 oz | 0.211644 oz |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 216 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 169 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.8 V |
| Rds On Drain Source Resistance | - | - | 5.3 mOhms |
| Qg Gate Charge | - | - | 44 nC |
| Forward Transconductance Min | - | - | 146 S |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Texas Instruments |
CSD18532Q5B | MOSFET 60-V N-Ch NexFET Pwr MOSFET | |
| CSD18532NQ5B | MOSFET 60V NCh NexFET Power MOSFET | ||
| CSD18532KCS | MOSFET 60-V N-Chanel NxFT Pwr MOSFETs | ||
| CSD18532Q5BT | MOSFET 60V, N-channel NexFET Pwr MOSFET | ||
| CSD18532NQ5BT | MOSFET 60-V N-Channel NexFET Power Mosfet | ||
| CSD18532 | Neu und Original | ||
| CSD18532NQ5BT | MOSFET N-CH 60V 100A | ||
| CSD18532Q5BT | MOSFET N-CH 60V 23A 8VSON | ||
| CSD18532KCS | Darlington Transistors MOSFET 60-V N-Chanel NxFT Pwr MOSFETs | ||
| CSD18532NQ5B | MOSFET N-CH 60V 22A 8VSON | ||
| CSD18532Q5B | MOSFET N-CH 60V 23A 8VSON |