PartNumber | CSD19535KCS | CSD19535KTTT | CSD19535KTT |
Description | MOSFET 100V N-CH NexFET Pwr MOSFET | MOSFET 100V N-Channel NexFET Power MOSFET | MOSFET 100V, N ch NexFET MOSFETG , single D2PAK, 3.4mOhm 3-DDPAK/TO-263 -55 to 175 |
Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | SMD/SMT | SMD/SMT |
Package / Case | TO-220-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
Id Continuous Drain Current | 187 A | 200 A | 197 A |
Rds On Drain Source Resistance | 3.6 mOhms | 3.4 mOhms | 3.4 mOhms |
Vgs th Gate Source Threshold Voltage | 2.2 V | 2.2 V | 2.2 V |
Vgs Gate Source Voltage | 10 V | 20 V | 10 V |
Qg Gate Charge | 78 nC | 75 nC | 75 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 300 W | 300 W | 300 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | NexFET | NexFET | NexFET |
Packaging | Tube | Reel | Reel |
Height | 16.51 mm | 19.7 mm | 4.7 mm |
Length | 10.67 mm | 9.25 mm | 9.25 mm |
Series | CSD19535KCS | CSD19535KTT | CSD19535KTT |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.7 mm | 10.26 mm | 10.26 mm |
Brand | Texas Instruments | Texas Instruments | Texas Instruments |
Forward Transconductance Min | 274 S | 301 S | 301 S |
Fall Time | 5 ns | 15 ns | 15 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 15 ns | 18 ns | 18 ns |
Factory Pack Quantity | 50 | 50 | 500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 60 ns | 21 ns | 21 ns |
Typical Turn On Delay Time | 32 ns | 9 ns | 9 ns |
Unit Weight | 0.211644 oz | 0.068643 oz | 0.077603 oz |
Moisture Sensitive | - | Yes | Yes |