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CSD19535KTTT

CSD19535KTTT
Mfr. #:
CSD19535KTTT
Beschreibung:
IGBT Transistors MOSFET 100V N-Channel NexFET Power MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CSD19535KTTT Datenblatt
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Mehr Informationen:
CSD19535KTTT Mehr Informationen CSD19535KTTT Product Details
Produkteigenschaft
Attributwert
Hersteller
Texas Instruments
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
CSD19535KTT
Verpackung
Spule
Gewichtseinheit
0.068654 oz
Montageart
SMD/SMT
Handelsname
NexFET
Paket-Koffer
TO-263-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
300 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
15 ns
Anstiegszeit
18 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
200 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Rds-On-Drain-Source-Widerstand
4.1 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
21 ns
Typische-Einschaltverzögerungszeit
9 ns
Qg-Gate-Ladung
75 nC
Vorwärts-Transkonduktanz-Min
301 S
Kanal-Modus
Erweiterung
Tags
CSD19535, CSD1953, CSD19, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Teil # Beschreibung Aktie Preis
CSD19535KTTT
DISTI # 296-41135-1-ND		MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1273In Stock
  • 10:$3.5890
  • 1:$4.0200
CSD19535KTTT
DISTI # 296-41135-6-ND		MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1273In Stock
  • 10:$3.5890
  • 1:$4.0200
CSD19535KTTT
DISTI # 296-41135-2-ND		MOSFET N-CH 100V 200A TO263
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		1250In Stock
  • 250:$2.5784
  • 100:$2.8571
  • 50:$3.1358
CSD19535KTTT
DISTI # CSD19535KTTT		Trans MOSFET N-CH 100V 200A 3-Pin TO-263 T/R - Tape and Reel (Alt: CSD19535KTTT)
RoHS: Compliant
Min Qty: 200
Container: Reel		Americas - 0
  • 200:$1.7900
  • 300:$1.6900
  • 500:$1.5900
  • 1000:$1.5900
  • 2000:$1.4900
CSD19535KTTTCSD19535KTT 100 V N-Channel NexFET&#153,Power MOSFET1000
  • 1000:$1.4400
  • 750:$1.5100
  • 500:$1.7900
  • 250:$2.1000
  • 100:$2.2400
  • 25:$2.5600
  • 10:$2.7500
  • 1:$3.0500
CSD19535KTTT
DISTI # 595-CSD19535KTTT		MOSFET 100V N-Channel NexFET Power MOSFET
RoHS: Compliant		561
  • 1:$3.3500
  • 10:$3.0200
  • 50:$3.0200
  • 100:$2.4700
  • 250:$2.3100
  • 500:$2.1000
CSD19535KTT
DISTI # 595-CSD19535KTT		MOSFET CSD19535KTT 100 V N-Channel NexFET Power MOSFET 3-DDPAK/TO-263
RoHS: Compliant		88
  • 1:$3.0200
  • 10:$2.7100
  • 100:$2.2200
  • 250:$2.0800
  • 500:$1.8900
CSD19535KTTT
DISTI # 9009885P		NEXFET N-CHANNEL MOSFET 100V 140A D2PAK, RL230
  • 10:£2.2000
  • 26:£2.1150
  • 50:£2.0300
Bild Teil # Beschreibung
CSD19536KTT

Mfr.#: CSD19536KTT

OMO.#: OMO-CSD19536KTT

 MOSFET 100V, N ch NexFET MOSFETG , single D2PAK, 2.4mOhm 3-DDPAK/TO-263 -55 to 175
CSD19531Q5A

Mfr.#: CSD19531Q5A

OMO.#: OMO-CSD19531Q5A

 MOSFET 100V 5.3mOhm Pwr MOSFET
CSD19535KTT

Mfr.#: CSD19535KTT

OMO.#: OMO-CSD19535KTT

 MOSFET 100V, N ch NexFET MOSFETG , single D2PAK, 3.4mOhm 3-DDPAK/TO-263 -55 to 175
CSD19533Q5AT

Mfr.#: CSD19533Q5AT

OMO.#: OMO-CSD19533Q5AT

 MOSFET 100V, 7.8mOhm SON5x6 N-ch NexFET
CSD19503KCS

Mfr.#: CSD19503KCS

OMO.#: OMO-CSD19503KCS

 MOSFET 80V 7.6mOhm N-CH Pwr MOSFET
CSD19506KTTT

Mfr.#: CSD19506KTTT

OMO.#: OMO-CSD19506KTTT

 MOSFET 80V, N ch NexFET MOSFETG , single D2PAK, 2.3mOhm 3-DDPAK/TO-263 -55 to 175
CSD19532KTTT

Mfr.#: CSD19532KTTT

OMO.#: OMO-CSD19532KTTT

 MOSFET 100V, N-channel NexFET Pwr MOSFET
CSD19536

Mfr.#: CSD19536

OMO.#: OMO-CSD19536-TEXAS-INSTRUMENTS

 Neu und Original
CSD19505KTT

Mfr.#: CSD19505KTT

OMO.#: OMO-CSD19505KTT-TEXAS-INSTRUMENTS

 MOSFET N-CH 80V 200A DDPAK-3
CSD19538Q2

Mfr.#: CSD19538Q2

OMO.#: OMO-CSD19538Q2-TEXAS-INSTRUMENTS

 MOSFET NCH 100V 14.4A SON
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von CSD19535KTTT dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,16 $
2,16 $
10
2,05 $
20,52 $
100
1,94 $
194,40 $
500
1,84 $
918,00 $
1000
1,73 $
1 728,00 $
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