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| PartNumber | D3S099N65B-U | D3S099N65D-U | D3S099N65E-T |
| Description | MOSFET 99 mOhm 650V Superjunction Power MOSFET in TO-220 | MOSFET 99 mOhm 650V Superjunction Power MOSFET in TO-247 | MOSFET 99 mOhm 650V |
| Manufacturer | D3 Semiconductor | D3 Semiconductor | D3 Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | SMD/SMT |
| Package / Case | TO-220-3 | TO-247-3 | TO-263-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | - | 650 V |
| Id Continuous Drain Current | 35.5 A | - | 31.8 A |
| Rds On Drain Source Resistance | 90 mOhms | - | 99 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.3 V | - | 2.3 V |
| Vgs Gate Source Voltage | 30 V | - | 30 V |
| Qg Gate Charge | 62.6 nC | - | 77 nC |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 281 W | - | 154 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Tube | Tube | Reel |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | D3 | D3 | D3 |
| Fall Time | 63 ns | - | 23 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 61 ns | - | 24 ns |
| Factory Pack Quantity | 50 | 30 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 81 ns | - | 90 ns |
| Typical Turn On Delay Time | 41 ns | - | 17 ns |
| Unit Weight | 0.063493 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
D3 |
D3S099N65B-U | MOSFET 99 mOhm 650V Superjunction Power MOSFET in TO-220 | |
| D3S099N65F-U | MOSFET 99 mOhm 650V | ||
| D3S099N65D-U | MOSFET 99 mOhm 650V Superjunction Power MOSFET in TO-247 | ||
| D3S099N65E-T | MOSFET 99 mOhm 650V |