 | |  | |
| PartNumber | DMC31D5UDJ-7 | DMC31D5UDJ-7B | DMC31D5UDJ |
| Description | MOSFET 30V N & P Enh FET Low RDSon 22.2pF | MOSFET MOSFET BVDSS: 25V-30V | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-963-6 | SOT-963-6 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 220 mA, 200 mA | 220 mA, 200 mA | - |
| Rds On Drain Source Resistance | 2.3 Ohms, 5.1 Ohms | 2.3 Ohms, 5.1 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 12 V | 12 V | - |
| Qg Gate Charge | 380 pC, 350 pC | 380 pC, 350 pC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 350 mW | 350 mW | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | DMC31 | DMC31 | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 7.5 ns, 8.7 ns | 7.5 ns, 8.7 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 2.2 ns, 5.2 ns | 2.2 ns, 5.2 ns | - |
| Factory Pack Quantity | 10000 | 10000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 21 ns, 18.8 ns | 21 ns, 18.8 ns | - |
| Typical Turn On Delay Time | 3.2 ns, 3.5 ns | 3.2 ns, 3.5 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMC31D5UDJ-7 | MOSFET 30V N & P Enh FET Low RDSon 22.2pF | |
| DMC31D5UDJ-7B | MOSFET MOSFET BVDSS: 25V-30V | ||
| DMC31D5UDJ-7B | MOSFET MOSFET BVDSS: 25V-30V | ||
| DMC31D5UDJ | Neu und Original | ||
| DMC31D5UDJ-7 | MOSFET N/P-CH 30V SOT963 |