DMN2011

DMN2011UFDE-7 vs DMN2011UFDF-13 vs DMN2011UFDE-13

 
PartNumberDMN2011UFDE-7DMN2011UFDF-13DMN2011UFDE-13
DescriptionMOSFET 20V N-Ch Enh Mode 12Vgss 80A .61WMOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10KMOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseU-DFN2020-E-6U-DFN2020-F-6U-DFN2020-E-6
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage20 V-20 V
Id Continuous Drain Current11.7 A-11.7 A
Rds On Drain Source Resistance15 mOhms-15 mOhms
Vgs th Gate Source Threshold Voltage1 V-1 V
Vgs Gate Source Voltage12 V-12 V
Qg Gate Charge56 nC-56 nC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation1.97 W-1.97 W
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingReelReelReel
SeriesDMN2011-DMN2011
Transistor Type1 N-Channel-1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time13.5 ns-13.5 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time2.6 ns-2.6 ns
Factory Pack Quantity30001000010000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time21.6 ns-21.6 ns
Typical Turn On Delay Time3.6 ns-3.6 ns
Unit Weight-0.000238 oz-
Tradename--PowerDI
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMN2011UTS-13 MOSFET MOSFET BVDSS: 8V-24V
DMN2011UFDE-7 MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W
DMN2011UFX-7 MOSFET Dual N-Ch Enh FET 20Vds 12Vgs 2248pF
DMN2011UFDF-7 MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K
DMN2011UFDF-13 MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K
DMN2011UFDE-13 MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W
DMN2011UFDF-7 20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2011UFX-7 Trans MOSFET N-CH 20V 12.2A 4-Pin VDFN EP T/R
DMN2011UFDE-13 MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W
DMN2011UFDE-7 MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W
Top