DMN2015

DMN2015UFDE-7 vs DMN2015UFDF-13 vs DMN2015UFDE

 
PartNumberDMN2015UFDE-7DMN2015UFDF-13DMN2015UFDE
DescriptionMOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3KMOSFET MOSFET BVDSS: 8V-24V
ManufacturerDiodes IncorporatedDiodes IncorporatedSEMTECH
Product CategoryMOSFETMOSFETIC Chips
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseU-DFN2020-E-6U-DFN2020-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current10.5 A11.6 A-
Rds On Drain Source Resistance9.3 mOhms6.8 mOhms-
Vgs th Gate Source Threshold Voltage500 mV400 mV-
Vgs Gate Source Voltage12 V4.5 V-
Qg Gate Charge45.6 nC19.3 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation660 mW1.8 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReel--
SeriesDMN2015--
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time10.9 ns7.4 ns-
Product TypeMOSFETMOSFET-
Rise Time16.8 ns6.9 ns-
Factory Pack Quantity300010000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time43.6 ns23 ns-
Typical Turn On Delay Time7.4 ns4.7 ns-
Unit Weight0.000238 oz--
Transistor Type-1 N-Channel-
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMN2015UFDF-7 MOSFET MOSFET BVDSS: 8V-24V
DMN2015UFDE-7 MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
DMN2015UFDF-13 MOSFET MOSFET BVDSS: 8V-24V
DMN2015UFDE Neu und Original
DMN2015UFDE-7 Trans MOSFET N-CH 20V 10.5A Automotive 6-Pin DFN EP T/R
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