PartNumber | DMN33D8LDW-7 | DMN3300U-7 | DMN33D8LDW-13 |
Description | MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W | MOSFET 600mW 30Vdss | MOSFET 33V Dual N-Ch Enh 30Vgss 250mA 0.35W |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-363-6 | SOT-23-3 | SOT-363-6 |
Number of Channels | 2 Channel | 1 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 250 mA | 2 A | - |
Rds On Drain Source Resistance | 2.4 Ohms, 2.4 Ohms | 150 mOhms | - |
Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
Vgs Gate Source Voltage | 20 V | 12 V | - |
Qg Gate Charge | 1.23 nC, 1.23 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 350 mW | 600 mW | - |
Configuration | Dual | Single | Dual |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | Reel |
Series | DMN33 | DMN33 | DMN33 |
Transistor Type | 2 N-Channel | 1 N-Channel | 2 N-Channel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Fall Time | 13.6 ns, 13.6 ns | 24 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 2.6 ns, 2.6 ns | 24 ns | - |
Factory Pack Quantity | 3000 | 3000 | 10000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 18.2 ns, 18.2 ns | 24 ns | - |
Typical Turn On Delay Time | 2.9 ns, 2.9 ns | 7 ns | - |
Unit Weight | 0.000265 oz | 0.000282 oz | 0.000265 oz |
Height | - | 1 mm | - |
Length | - | 2.9 mm | - |
Product | - | MOSFET Small Signal | - |
Width | - | 1.3 mm | - |