DMN7

DMN7022LFG-7 vs DMN7022LFGQ-13 vs DMN7022LFG-13

 
PartNumberDMN7022LFG-7DMN7022LFGQ-13DMN7022LFG-13
DescriptionMOSFET 75V N-Ch Enh FET 20Vgs 10.5A 2737pFMOSFET MOSFET BVDSS: 61V-100VMOSFET 75V N-Ch Enh FET 20Vgs 10.5A 2737pF
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePowerDI3333-8PowerDI3333-8PowerDI3333-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage75 V75 V75 V
Id Continuous Drain Current7.8 A23 A7.8 A
Rds On Drain Source Resistance14.6 mOhms14.6 mOhms14.6 mOhms
Vgs th Gate Source Threshold Voltage3 V1 V3 V
Vgs Gate Source Voltage20 V10 V20 V
Qg Gate Charge26.4 nC56.5 nC26.4 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation900 mW2 W900 mW
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReel-Reel
SeriesDMN70-DMN70
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time3.9 ns3.9 ns3.9 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time5.7 ns5.7 ns5.7 ns
Factory Pack Quantity200030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time19.6 ns19.6 ns19.6 ns
Typical Turn On Delay Time6.1 ns6.1 ns6.1 ns
Unit Weight0.002540 oz-0.002540 oz
Qualification-AEC-Q101-
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMN7022LFGQ-7 MOSFET MOSFET BVDSS: 61V-100V
DMN7022LFG-7 MOSFET 75V N-Ch Enh FET 20Vgs 10.5A 2737pF
DMN7022LFGQ-13 MOSFET MOSFET BVDSS: 61V-100V
DMN7022LFG-13 MOSFET 75V N-Ch Enh FET 20Vgs 10.5A 2737pF
DMN7022LFG Neu und Original
DMN7022LFG-7 Darlington Transistors MOSFET 75V N-Ch Enh FET 20Vgs 10.5A 2737pF
DMN7022LFG-13 MOSFET 75V N-Ch Enh FET 20Vgs 10.5A 2737pF
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