DMP2010

DMP2010UFG-7 vs DMP2010UFV-13 vs DMP2010UFG-13

 
PartNumberDMP2010UFG-7DMP2010UFV-13DMP2010UFG-13
DescriptionMOSFET 20V P-Ch Enh FET 10Vgss -80A IdmMOSFET MOSFETBVDSS: 8V-24VMOSFET 20V P-Ch Enh FET 10Vgss -80A Idm
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerDI3333-8PowerDI3333-8PowerDI3333-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage20 V20 V20 V
Id Continuous Drain Current42 A50 A42 A
Rds On Drain Source Resistance12.5 mOhms7.5 mOhms12.5 mOhms
Vgs th Gate Source Threshold Voltage400 mV1.2 V400 mV
Vgs Gate Source Voltage10 V10 V10 V
Qg Gate Charge103 nC103 nC103 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation900 mW2 W900 mW
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesDMP2010-DMP2010
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time110 ns110 ns110 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time30 ns30 ns30 ns
Factory Pack Quantity200030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time235 ns235 ns235 ns
Typical Turn On Delay Time9.7 ns9.7 ns9.7 ns
Unit Weight0.002540 oz0.002540 oz0.002540 oz
Transistor Type-1 P-Channel-
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
DMP2010UFG-7 MOSFET 20V P-Ch Enh FET 10Vgss -80A Idm
DMP2010UFV-7 MOSFET MOSFETBVDSS: 8V-24V
DMP2010UFV-13 MOSFET MOSFETBVDSS: 8V-24V
DMP2010UFG-13 MOSFET 20V P-Ch Enh FET 10Vgss -80A Idm
DMP2010UFG Neu und Original
DMP2010UFG-7 20V P-CHANNEL ENHANCEMENT MODE MOSFET
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