![]() | |||
| PartNumber | DMP3010LK3Q-13 | DMP3010LK3 | DMP3010LK3-13 |
| Description | MOSFET P-Ch Enh Mode FET 30V 20Vgs | MOSFET P CH 30V 17A TO252 | |
| Manufacturer | Diodes Incorporated | - | Diodes Incorporated |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | P-Channel | - | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 17 A | - | - |
| Rds On Drain Source Resistance | 8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 59.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 3.4 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Series | DMP3010 | - | DMP3010 |
| Transistor Type | 1 P-Channel | - | 1 P-Channel |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 99.3 ns | - | 99.3 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 9.4 ns | - | 9.4 ns |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 260.7 ns | - | 260.7 ns |
| Typical Turn On Delay Time | 11.4 ns | - | 11.4 ns |
| Unit Weight | 0.011993 oz | - | 0.139332 oz |
| Package Case | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | TO-252-3 |
| FET Type | - | - | MOSFET P-Channel, Metal Oxide |
| Power Max | - | - | 1.7W |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 6234pF @ 15V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 17A (Ta) |
| Rds On Max Id Vgs | - | - | 8 mOhm @ 10A, 10V |
| Vgs th Max Id | - | - | 2.1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 59.2nC @ 4.5V |
| Pd Power Dissipation | - | - | 1.7 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | - 14.5 A |
| Vds Drain Source Breakdown Voltage | - | - | - 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 2.1 V |
| Rds On Drain Source Resistance | - | - | 10.2 mOhms |
| Qg Gate Charge | - | - | 59.2 nC |
| Forward Transconductance Min | - | - | 30 S |