PartNumber | DMT10H015LFG-7 | DMT10H015LCG-7 | DMT10H015LFG-13 |
Description | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | MOSFET MOSFET BVDSS: 61V-100V | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | PowerDI3333-8 | V-DFN3333-8 | PowerDI3333-8 |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | - | 100 V |
Id Continuous Drain Current | 42 A | - | 42 A |
Rds On Drain Source Resistance | 13.5 mOhms | - | 13.5 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | - | 2 V |
Vgs Gate Source Voltage | 10 V | - | 10 V |
Qg Gate Charge | 33.3 nC | - | 33.3 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 2 W | - | 2 W |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | PowerDI | - | PowerDI |
Packaging | Reel | Reel | Reel |
Height | 0.8 mm | - | 0.8 mm |
Length | 3.3 mm | - | 3.3 mm |
Series | DMT10 | - | DMT10 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 3.3 mm | - | 3.3 mm |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Fall Time | 8.1 ns | - | 8.1 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 7 ns | - | 7 ns |
Factory Pack Quantity | 2000 | 2000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 19.7 ns | - | 19.7 ns |
Typical Turn On Delay Time | 6.5 ns | - | 6.5 ns |
Unit Weight | 0.002540 oz | - | 0.002540 oz |