 |  | | |
| PartNumber | DN350T05-7 | DN3525N8-G | DN3535N8-G |
| Description | Bipolar Transistors - BJT NPN BIPOLAR | MOSFET 250V 6Ohm | MOSFET 350V 10Ohm |
| Manufacturer | Diodes Incorporated | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-89-3 | SOT-89-3 |
| Transistor Polarity | NPN | N-Channel | N-Channel |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 350 V | - | - |
| Collector Base Voltage VCBO | 350 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 1 V | - | - |
| Maximum DC Collector Current | 500 mA | - | - |
| Gain Bandwidth Product fT | 50 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | DN350 | - | - |
| Height | 1 mm | 1.6 mm | - |
| Length | 3.05 mm | 4.6 mm | - |
| Packaging | Reel | Reel | Reel |
| Width | 1.4 mm | 2.6 mm | - |
| Brand | Diodes Incorporated | Microchip Technology | Microchip Technology |
| DC Collector/Base Gain hfe Min | 15 at 100 mA, 10 V | - | - |
| Pd Power Dissipation | 300 mW | 1.6 W | 1.6 W |
| Product Type | BJTs - Bipolar Transistors | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 2000 | 2000 |
| Subcategory | Transistors | MOSFETs | MOSFETs |
| Unit Weight | 0.000282 oz | 0.004233 oz | 0.001862 oz |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Vds Drain Source Breakdown Voltage | - | 250 V | 350 V |
| Id Continuous Drain Current | - | 360 mA | 230 mA |
| Rds On Drain Source Resistance | - | 6 Ohms | 10 Ohms |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Channel Mode | - | Depletion | Depletion |
| Product | - | MOSFET Small Signal | MOSFET Small Signal |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Type | - | FET | FET |
| Fall Time | - | 40 ns | 20 ns |
| Rise Time | - | 25 ns | 20 ns |
| Typical Turn Off Delay Time | - | - | 20 ns |
| Typical Turn On Delay Time | - | - | 15 ns |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
DN350T05-7 | Bipolar Transistors - BJT NPN BIPOLAR | |
Microchip Technology |
DN3545N8-G | MOSFET 450V 20Ohm | |
| DN3525N8-G | MOSFET 250V 6Ohm | ||
| DN3535N8-G | MOSFET 350V 10Ohm | ||
| DN3545N3-G | MOSFET 450V 20Ohm | ||
| DN3545N3-G P005 | MOSFET N-Channel MOSFET 450V 0.136A 3P TO-92 | ||
| DN3545N3-G P013 | MOSFET N-Channel MOSFET 450V 0.136A 3P TO-92 | ||
| DN3545N3-G P002 | MOSFET N-Channel MOSFET 450V 0.136A 3P TO-92 | ||
| DN350N12K | Neu und Original | ||
| DN350T05 | Neu und Original | ||
| DN350T05-7-F | Neu und Original | ||
| DN3525-8N | Neu und Original | ||
| DN3525N8 | MOSFET 250V 6Ohm | ||
| DN3535N8 | MOSFET 350V 10Ohm | ||
| DN3535N8-G | MOSFET N-CH 350V 0.23A SOT89-3 | ||
| DN3545 | Neu und Original | ||
| DN3545N3 | MOSFET 450V 20Ohm | ||
| DN3545N3-G | MOSFET N-CH 450V 0.136A TO92-3 | ||
| DN3545N8 | MOSFET 450V 20Ohm | ||
| DN3545N8-G | MOSFET N-CH 450V 0.2A SOT89-3 | ||
| DN3525N8-G-CUT TAPE | Neu und Original | ||
| DN3535N8-G-CUT TAPE | Neu und Original | ||
| DN3545N8-G-CUT TAPE | Neu und Original | ||
| DN350T05-7 | Bipolar Transistors - BJT NPN BIPOLAR | ||
| DN3525N8-G | IGBT Transistors MOSFET 250V 6Ohm | ||
| DN3545N3-G P003 | RF Bipolar Transistors MOSFET N-Channel MOSFET 450V 0.136A 3P TO-92 | ||
| DN3545N3-G P005 | RF Bipolar Transistors MOSFET N-Channel MOSFET 450V 0.136A 3P TO-92 | ||
| DN3545N3-G P013 | RF Bipolar Transistors MOSFET N-Channel MOSFET 450V 0.136A 3P TO-92 | ||
| DN3545N3-G P014 | RF Bipolar Transistors MOSFET N-Channel MOSFET 450V 0.136A 3P TO-92 | ||
| DN3545N3-G P002 | RF Bipolar Transistors MOSFET N-Channel MOSFET 450V 0.136A 3P TO-92 |