| PartNumber | E3M0065090D | E3M0120090D | E3M0280090D |
| Description | MOSFET 900V 65mOhms G3 SiC MOSFET | MOSFET 900V 120mOhms G3 SiC MOSFET | MOSFET 900V 280mOhms G3 SiC MOSFET |
| Manufacturer | Cree, Inc. | Cree, Inc. | Cree, Inc. |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | SiC | SiC | SiC |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 900 V | 900 V | 900 V |
| Id Continuous Drain Current | 35 A | 23 A | 11.5 A |
| Rds On Drain Source Resistance | 84.5 mOhms | 155 mOhms | 364 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.7 V | 1.7 V | 1.7 V |
| Vgs Gate Source Voltage | 18 V, - 8 V | 18 V, - 8 V | 18 V, - 8 V |
| Qg Gate Charge | 30.4 nC | 17.3 nC | 9.5 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 125 W | 97 W | 54 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Wolfspeed / Cree | Wolfspeed / Cree | Wolfspeed / Cree |
| Forward Transconductance Min | 13.6 S | 7.7 S | 3.6 S |
| Fall Time | 9 ns | 8 ns | 7.5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 11 ns | 10 ns | 10 ns |
| Factory Pack Quantity | 600 | 600 | 600 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 23 ns | 25 ns | 17.5 ns |
| Typical Turn On Delay Time | 35 ns | 27 ns | 26 ns |