ECH85

ECH8501-TL-H vs ECH8502-TL-H vs ECH8503-TL-H

 
PartNumberECH8501-TL-HECH8502-TL-HECH8503-TL-H
DescriptionBipolar Transistors - BJT BIP PNP+NPN 5A 30VBipolar Transistors - BJT BIP PNP+NPN 5A 50VBipolar Transistors - BJT BIP PNP+PNP 5A 50V
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseECH-8ECH-8ECH-8
Transistor PolarityNPN, PNPNPN, PNPPNP
ConfigurationDual--
Collector Emitter Voltage VCEO Max30 V50 V- 50 V
Collector Base Voltage VCBO40 V, - 30 V--
Emitter Base Voltage VEBO6 V6 V- 6 V
Collector Emitter Saturation Voltage75 mV, - 100 mV--
Maximum DC Collector Current30 A--
Gain Bandwidth Product fT260 MHz, 280 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesECH8501ECH8502ECH8503
DC Current Gain hFE Max560 at 500 mA, 2 V--
PackagingReelReelReel
BrandON SemiconductorON SemiconductorON Semiconductor
DC Collector/Base Gain hfe Min200 at 500 mA, 2 V200200
Pd Power Dissipation1.6 W1.3 W1.3 W
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity300030003000
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.000638 oz0.000635 oz-
Continuous Collector Current-5 A- 5 A
Hersteller Teil # Beschreibung RFQ
ECH8501-TL-H Bipolar Transistors - BJT BIP PNP+NPN 5A 30V
ECH8502-TL-H Bipolar Transistors - BJT BIP PNP+NPN 5A 50V
ON Semiconductor
ON Semiconductor
ECH8503-TL-H Bipolar Transistors - BJT BIP PNP+PNP 5A 50V
ECH8503-TL-H Bipolar Transistors - BJT BIP PNP+PNP 5A 50V
ECH8502-TL-H Bipolar Transistors - BJT BIP PNP+NPN 5A 50V
ECH8501-TL-H TRANS NPN/PNP 30V 5A 8ECH
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