FDB12N50FT

FDB12N50FTM-WS vs FDB12N50FTM_WS vs FDB12N50FTM

 
PartNumberFDB12N50FTM-WSFDB12N50FTM_WSFDB12N50FTM
DescriptionMOSFET 500V 11.5A 0.7Ohm N-ChannelDarlington Transistors MOSFET 500V 11.5A 0.7Ohm N-Channel- Bulk (Alt: FDB12N50FTM)
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current11.5 A--
Rds On Drain Source Resistance590 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation165 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height4.83 mm--
Length10.67 mm--
SeriesFDB12N50F--
Transistor Type1 N-Channel1 N-Channel-
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time35 ns35 ns-
Product TypeMOSFET--
Rise Time45 ns45 ns-
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50 ns50 ns-
Typical Turn On Delay Time21 ns21 ns-
Part # AliasesFDB12N50FTM_WS--
Unit Weight0.046296 oz0.046296 oz-
Package Case-TO-252-3-
Pd Power Dissipation-165 W-
Vgs Gate Source Voltage-30 V-
Id Continuous Drain Current-11.5 A-
Vds Drain Source Breakdown Voltage-500 V-
Rds On Drain Source Resistance-590 mOhms-
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDB12N50FTM-WS MOSFET 500V 11.5A 0.7Ohm N-Channel
FDB12N50FTM_WS Darlington Transistors MOSFET 500V 11.5A 0.7Ohm N-Channel
FDB12N50FTM - Bulk (Alt: FDB12N50FTM)
ON Semiconductor
ON Semiconductor
FDB12N50FTM-WS MOSFET N-CH 500V 11.5A D2PAK
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