 |  |  | |
| PartNumber | FDB8870 | FDB8870 IRL3803STRLPBF | FDB8870-F085 |
| Description | MOSFET 30V N-Channel PowerTrench | MOSFET N-CH 30V 21A TO-263AB | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 160 A | - | - |
| Rds On Drain Source Resistance | 3.9 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 160 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | PowerTrench | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FDB8870 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 47 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 98 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 75 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | FDB8870_NL | - | - |
| Unit Weight | 0.046296 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDB8870 | MOSFET 30V N-Channel PowerTrench | |
ON Semiconductor |
FDB8870 | MOSFET N-CH 30V 23A TO-263AB | |
| FDB8870-F085 | MOSFET N-CH 30V 21A TO-263AB | ||
| FDB8870_F085 | IGBT Transistors MOSFET 30V 160A 3.9Mohm N-CH POWERTRENCH | ||
| FDB8870 IRL3803STRLPBF | Neu und Original | ||
| FDB8870-NL | Neu und Original |