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| PartNumber | FJN3313RTA | FJN3313RBU | FJN3313R |
| Description | Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial | TRANS PREBIAS NPN 300MW TO92-3 | |
| Manufacturer | ON Semiconductor | - | FAILCHILD |
| Product Category | Bipolar Transistors - Pre-Biased | - | Transistors (BJT) - Single, Pre-Biased |
| RoHS | Y | - | - |
| Configuration | Single | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 2.2 kOhms | - | - |
| Typical Resistor Ratio | 0.047 | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 Kinked Lead | - | - |
| DC Collector/Base Gain hfe Min | 68 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 0.1 A | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Ammo Pack | - | - |
| DC Current Gain hFE Max | 68 | - | - |
| Emitter Base Voltage VEBO | 10 V | - | - |
| Height | 5.33 mm | - | - |
| Length | 5.2 mm | - | - |
| Type | NPN Epitaxial Silicon Transistor | - | - |
| Width | 4.19 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.010088 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FJN3313RTA | Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial | |
ON Semiconductor |
FJN3313RBU | TRANS PREBIAS NPN 300MW TO92-3 | |
| FJN3313RTA | TRANS PREBIAS NPN 300MW TO92-3 | ||
| FJN3313R | Neu und Original |