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FJN3313RTA

FJN3313RTA
Mfr. #:
FJN3313RTA
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FJN3313RTA Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FJN3313RTA Datasheet
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Aufbau:
Single
Polarität des Transistors:
NPN
Typischer Eingangswiderstand:
2.2 kOhms
Typisches Widerstandsverhältnis:
0.047
Montageart:
Durchgangsloch
Paket / Koffer:
TO-92-3 Kinked Lead
DC-Kollektor/Basisverstärkung hfe Min:
68
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
0.1 A
Spitzen-DC-Kollektorstrom:
100 mA
Pd - Verlustleistung:
300 mW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Munitionspackung
DC-Stromverstärkung hFE Max:
68
Emitter- Basisspannung VEBO:
10 V
Höhe:
5.33 mm
Länge:
5.2 mm
Typ:
Epitaxialer NPN-Siliziumtransistor
Breite:
4.19 mm
Marke:
ON Semiconductor / Fairchild
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
2000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.010088 oz
Tags
FJN3313, FJN331, FJN33, FJN3, FJN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans Digital BJT NPN 50V 100mA 3-Pin TO-92 Ammo
***i-Key
TRANS PREBIAS NPN 300MW TO92-3
Teil # Mfg. Beschreibung Aktie Preis
FJN3313RTA
DISTI # FJN3313RTA-ND		ON SemiconductorTRANS PREBIAS NPN 300MW TO92-3
RoHS: Compliant
Min Qty: 16000
Container: Tape & Box (TB)		Limited Supply - Call
    FJN3313RTA
    DISTI # 512-FJN3313RTA    		ON SemiconductorBipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
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      FJN3310RTA

      Mfr.#: FJN3310RTA

      OMO.#: OMO-FJN3310RTA

      		 Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
      FJN3303BU

      Mfr.#: FJN3303BU

      OMO.#: OMO-FJN3303BU

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      FJN3304RBU

      Mfr.#: FJN3304RBU

      OMO.#: OMO-FJN3304RBU

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      FJN3306RBU

      Mfr.#: FJN3306RBU

      OMO.#: OMO-FJN3306RBU-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92-3
      FJN3309RBU

      Mfr.#: FJN3309RBU

      OMO.#: OMO-FJN3309RBU-ON-SEMICONDUCTOR

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      Mfr.#: FJN3312RTA

      OMO.#: OMO-FJN3312RTA-ON-SEMICONDUCTOR

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      FJN3315RTA

      Mfr.#: FJN3315RTA

      OMO.#: OMO-FJN3315RTA-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92-3
      FJN3305/R3305

      Mfr.#: FJN3305/R3305

      OMO.#: OMO-FJN3305-R3305-1190

      		 Neu und Original
      FJN3310RTA

      Mfr.#: FJN3310RTA

      OMO.#: OMO-FJN3310RTA-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN 300MW TO92-3
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3500
      Menge eingeben:
      Der aktuelle Preis von FJN3313RTA dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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