 |  | | |
| PartNumber | FQB9N50TM | FQB9N50TM_AM002 | FQB9P25 |
| Description | MOSFET 500V N-Channel QFET | MOSFET QF -250V 620MOHM D2PAK | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 9 A | - | - |
| Rds On Drain Source Resistance | 730 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.13 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 8.2 S | - | - |
| Fall Time | 60 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 95 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 55 ns | - | - |
| Typical Turn On Delay Time | 25 ns | - | - |
| Part # Aliases | FQB9N50TM_NL | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB9P25TM | MOSFET 250V P-Channel QFET | |
ON Semiconductor |
FQB9N50TM | MOSFET N-CH 500V 9A D2PAK | |
| FQB9P25TM | MOSFET P-CH 250V 9.4A D2PAK | ||
| FQB9N50TM_AM002 | Neu und Original | ||
| FQB9P25 | MOSFET QF -250V 620MOHM D2PAK | ||
| FQBF140N03 | Neu und Original | ||
| FQBF5N50C | Neu und Original | ||
| FQBN8N60C | Neu und Original | ||
| FQB9P25TM-NL | Neu und Original |