FQB4N2

FQB4N20LTM vs FQB4N20 vs FQB4N20L

 
PartNumberFQB4N20LTMFQB4N20FQB4N20L
DescriptionMOSFET 200V N-Ch QFET Logic Level
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current3.8 A--
Rds On Drain Source Resistance1.35 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.13 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time40 ns--
Product TypeMOSFET--
Rise Time70 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time7 ns--
Unit Weight0.011640 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB4N20LTM MOSFET 200V N-Ch QFET Logic Level
FQB4N20 Neu und Original
FQB4N20L Neu und Original
FQB4N20TM-NL Neu und Original
FQB4N20TMFSC Neu und Original
FQB4N25 Neu und Original
ON Semiconductor
ON Semiconductor
FQB4N20TM MOSFET N-CH 200V 3.6A D2PAK
FQB4N20LTM MOSFET N-CH 200V 3.8A D2PAK
FQB4N25TM MOSFET N-CH 250V 3.6A D2PAK
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