PartNumber | FQB8N60CTM | FQB8N25TM | FQB8N60CTM-WS |
Description | MOSFET 600V N-Channel Adv Q-FET C-Series | MOSFET 250V N-Channel QFET | MOSFET 600V, NCH MOSFET |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 250 V | 600 V |
Id Continuous Drain Current | 7.5 A | 8 A | 3.75 A |
Rds On Drain Source Resistance | 1.2 Ohms | 420 mOhms | 1.2 Ohms |
Vgs Gate Source Voltage | 30 V | 30 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 3.13 W | 3.13 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | Reel |
Height | 4.83 mm | 4.83 mm | 4.83 mm |
Length | 10.67 mm | 10.67 mm | 10.67 mm |
Series | FQB8N60C | - | QFET |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | MOSFET | MOSFET | - |
Width | 9.65 mm | 9.65 mm | 9.65 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 8.7 S | 6.6 S | - |
Fall Time | 64.5 ns | 42 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 60.5 ns | 95 ns | - |
Factory Pack Quantity | 800 | 750 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 81 ns | 11 ns | - |
Typical Turn On Delay Time | 16.5 ns | 10 ns | - |
Part # Aliases | FQB8N60CTM_NL | FQB8N25TM_NL | FQB8N60CTM_WS |
Unit Weight | 0.046296 oz | 0.139332 oz | - |