FQD19N10T

FQD19N10TM vs FQD19N10TF vs FQD19N10TM_F080

 
PartNumberFQD19N10TMFQD19N10TFFQD19N10TM_F080
DescriptionMOSFET 100V N-Ch QFET Logic LevelMOSFET 100V N-Ch QFET Logic LevelMOSFET N-CH 100V 15.6A DPAK
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSEE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current15.6 A15.6 A-
Rds On Drain Source Resistance100 mOhms100 mOhms-
Vgs Gate Source Voltage25 V25 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
SeriesFQD19N10--
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min11 S11 S-
Fall Time65 ns65 ns-
Product TypeMOSFETMOSFET-
Rise Time150 ns150 ns-
Factory Pack Quantity25002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time20 ns20 ns-
Typical Turn On Delay Time7.5 ns7.5 ns-
Part # AliasesFQD19N10TM_NLFQD19N10TF_NL-
Unit Weight0.009184 oz0.139332 oz-
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQD19N10TM MOSFET 100V N-Ch QFET Logic Level
FQD19N10TF MOSFET 100V N-Ch QFET Logic Level
ON Semiconductor
ON Semiconductor
FQD19N10TF MOSFET N-CH 100V 15.6A DPAK
FQD19N10TM MOSFET N-CH 100V 15.6A DPAK
FQD19N10TM_F080 MOSFET N-CH 100V 15.6A DPAK
FQD19N10TM,FQD19N10 Neu und Original
Top